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天线几何结构对低温GaAs光电导THz发射的影响
Effect of the Antenna Structure on THz Radiation Properties from Low-Temperature-Grown GaAs Photoconductive Emitters
【作者】 崔利杰; 曾一平; 王保强; 朱战平; 石小溪; 黄振; 李淼; 赵国忠;
【Author】 Cui Lijie~1,Zeng Yiping~1,Wang Baoqiang~1,Zhu Zhanping~1, Shi Xiaoxi~2,Huang Zhen~2,Li Miao~2,Zhao Guozhong~2 (1.Novel Materials Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; 2.Department of Physics,Capital Normal University,Beijing 100087,China)
【机构】 中国科学院半导体研究所材料中心; 首都师范大学物理系;
【摘要】 研究了用飞秒激光激发低温生长的GaAs(LT-GaAs)大孔径光电导天线产生太赫兹(Hz)波的辐射特性。通过设计七种大孔径天线结构,来研究天线的几何结构对THz发射性能的影响。实验发现七种天线的有效频谱宽度都达到了3 THz,而且七种不同几何形状天线的THz发射谱与频率谱并没有太显著的差别。
【Abstract】 The terahertz radiation properties of low-temperature-grown GaAs(LT-GaAs) photo-conductive antenna excited by femtosecond laser pulse was investigated.Seven kinds of photo-conductive antennas(PCA) were designed on the same LT-GaAs to investigate how the antenna structure influenced on the terahertz radiation properties.The spectral bandwidth of 3 THz was obtained with time domain spectroscopy for all PCA.Yet the radiation spectra of seven kinds of PCA shows no significant difference.
【Key words】 terahertz wave; low-temperature-grown GaAs; photoconductive antenna; time domain spectroscopy;
- 【会议录名称】 第十五届全国化合物半导体材料,微波器件和光电器件学术会议论文集
- 【会议名称】第十五届全国化合物半导体材料,微波器件和光电器件学术会议
- 【会议时间】2008-11-30
- 【会议地点】中国广东广州
- 【分类号】TN304.23
- 【主办单位】中国电子学会半导体与集成技术分会、电子材料分会