【作者】 包达群； 张翊； 郭航； 郭涛；

【Author】 Da-qun BAO,Yi ZHANG,Hang GUO Pen-Tung Sah MEMS Research Center,Xiamen University,Xiamen 361005,China Tao GUO School of Information Science and Engineering,Xinjiang University,Urumqi 830046,China

【机构】 厦门大学萨本栋微机电研究中心； 新疆大学信息科学与工程学院；

【摘要】 本文介绍用Sol-gel技术制备的PZT薄膜的生长和表征。文中,我们通过分析极化强度来研究退火温度、不同的膜厚和不同衬底对PZT薄膜铁电特性的影响。PZT薄膜的电滞回线用Sawyer Tower回路来测量。实验数据表明PZT薄膜的剩余极化强度随着膜的厚度的增加而增大。在退火温度为650℃,Ti和Pt/Ti电极上的剩余计划强度分别8.6μC/cm~2and 11.0μC/cm~2。因此使用Sol-gel法生长的PZT薄膜可以用于基于PZT的铁电MEMS器件。更多还原

【Abstract】 This paper presents the growth and characterization of PZT ferroelectric thin films by using the sol-gel technology.We study the influences of annealing temperatures,different film thickness and different substrates,including titanium and platinum layers on silicon substrate,on the ferroelectric performance of PZT thin films by analyzing the polarization hysteresis.The electric hysteresis loop of PZT thin films is measured by using a Sawyer Tower circuit.The results show that the remnant polarization of PZT thin films is higher with the increase of thickness,and the remnant polarization is 8.6μC/cm~2 and 11.0μC/cm~2 on Ti electrode and Pt/Ti electrode at the annealing temperature of 650℃,respectively.Thus the PZT thin films prepared by using the sol-gel method can be used for developing PZT-based ferroelectric MEMS devices.更多还原