【作者】 王洁；

【导师】 王泽岩； 黄柏标； 王英民；

【作者基本信息】 山东大学 ， 材料与化工（专业学位）， 2025， 硕士

【摘要】 二维层状材料因其独特的电学和光学性质,在纳米科技领域受到人们的广泛关注。其中,MoS₂作为二维过渡金属硫族化合物（TMDs）的典型代表,因其优异的半导体特性、可调的带隙以及良好的光电性能,成为下一代光电器件的重要候选材料。在众多制备方法中,CVD法因其具有成本低、均匀性好等优势,被认为是最具工业化潜力的方法。然而,目前CVD法制备MoS₂二维薄膜仍面临反应动力学难控制、晶畴取向无序以及衬底界面匹配差等问题,导致高质量MoS₂的制备依然存在极大挑战。针对这些问题,本文围绕MoS₂二维薄膜的高质量制备,利用外置硫源低压CVD生长系统,通过系统研究各生长参数对MoS₂薄膜生长过程的影响规律,深入探索蓝宝石衬底上MoS₂薄膜的成核过程及生长机理,提出通过取向化一维MoO2纳米棒作为模板诱导MoS₂晶畴二维有序生长的新机制,并通过系统研究蓝宝石衬底取向对MoO2模板生长的作用机制,得到了可诱导MoS₂取向化生长的有效模板,进一步探索MoO2诱导生长MoS₂的实验条件,在C面蓝宝石衬底上实现高取向性MoS₂单层薄膜的成功制备,为CVD法在蓝宝石衬底制备高质量单层MoS₂薄膜提供新的思路。本论文的主要内容研究内容如下:在第一章中,首先简要概述了 MoS₂的基本物理性质、潜在应用及其相关制备方法。之后重点对CVD法制备MoS₂的研究现状进行了介绍。最后,通过分析目前CVD法的挑战和不足,提出了模板诱导MoS₂取向排列生长的研究设想,并阐明本论文的选题意义及研究内容。在第二章中,为实现MoS₂薄膜的高质量可控制备,利用低压CVD生长系统,通过设计正交实验,系统研究了 CVD法中的生长条件对MoS₂生长过程的影响规律,并基于实验结果获得了制备MoS₂单层薄膜的边界条件。在第三章中,为获得有利于MoS₂取向生长的MoO2成核诱导模版,系统研究了不同取向蓝宝石衬底对MoO2模版构建的作用机制。利用低压CVD法制备MoO2成核诱导模版,阐明MoO2在不同取向蓝宝石衬底上的生长习性,并结合理论分析,对以MoO2作为模版诱导MoS₂定向生长的设想提供理论基础。在第四章中,基于前面的研究基础,采用分段控硫CVD法,系统研究了不同取向蓝宝石衬底上MoO2模板诱导MoS₂横向外延生长条件,提出“一维模板-二维外延”协同控制策略,在C面蓝宝石衬底上成功实现单层MoS₂单晶薄膜的取向化制备,为其他二维TMDs材料定向外延提供了新思路。在第五章中,在总结本文的研究内容基础上,详细阐述本文的主要创新点和其中存在的问题及不足之处,最后对未来的工作进行展望。更多还原

【Abstract】 Two-dimensional layered materials have received much attention in the field of nanotechnology due to their unique electrical and optical properties.Among them,MoS₂,as a typical representative of 2D transition metal-sulfur compounds（TMDs）,has become an important candidate for next-generation optoelectronic devices due to its excellent semiconducting properties,tunable bandgap,and good optoelectronic performance.Among the many preparation methods,the CVD method is considered to be the most promising method for industrialisation due to its advantages such as low cost and good uniformity.However,at present,the preparation of MoS₂ 2D films by CVD method still faces the problems of difficult to control reaction kinetics,disordered crystalline domain orientation and poor matching of substrate interfaces,which results in the preparation of high-quality MoS₂ is still a great challenge.To address these problems,this paper focuses on the preparation of high quality MoS₂ 2D films,using an external sulfur source low-pressure CVD growth system,through a systematic study of the influence of various growth parameters on the growth process of MoS₂ films,in-depth exploration of the nucleation process and growth mechanism of MoS₂ films on sapphire substrates,and proposes a new mechanism for the 2D ordering and growth of MoS₂ domains by using oriented one-dimensional MoO2 nanorods as templates,and by a systematic study of the reaction kinetics.The new mechanism of MoS₂ growth is proposed to induce twodimensional ordering of MoS₂ domains through oriented one-dimensional MoO2 nanorods as templates,and the effective templates for MoS₂ oriented growth are obtained by systematically investigating the role of sapphire substrate orientation on MoO2 template growth,and further exploring the experimental conditions of MoO2-induced growth of MoS₂,so as to achieve the successful preparation of highly oriented MoS₂ monolayer on C-plane sapphire substrates,which provides a new way for the preparation of high-quality monolayer MoS₂ thin films on sapphire substrates by CVD.MoS₂ films on sapphire substrates by CVD.The main contents of this thesis include the following five parts:In Chapter 1,a brief overview of the basic physical properties of MoS₂,its potential applications and its related preparation methods is first presented.Afterwards,the current research status of MoS₂ preparation by CVD method is highlighted.Finally,by analysing the challenges and shortcomings of the current CVD method,the research concept of templateinduced MoS₂ oriented aligned growth is proposed,and the significance of the selected topic and the research content of this thesis are elucidated.In Chapter 2,in order to achieve high-quality and controllable preparation of MoS₂ thin films,the growth conditions in the CVD method were systematically investigated by designing orthogonal experiments in order to achieve the high-quality and controllable preparation of MoS₂ thin films by using a low-pressure CVD growth system,the influence law of growth conditions in the CVD method on the growth process of MoS₂ was systematically investigated and the boundary conditions for the preparation of MoS₂ monolayer thin films were obtained based on the experimental results.In Chapter 3,in order to obtain MoO2 nucleation-inducing templates that are favourable for MoS₂ oriented growth,the mechanism of the different orientations of the sapphire substrate on the construction of MoO2 templates was systematically investigated.The MoO2 nucleationinducing templates are prepared by low-pressure CVD method to elucidate the growth habit of MoO2 on differently oriented sapphire substrates,and combined with the theoretical analyses,the theoretical basis is provided for the conception of using MoO2 as a template for inducing the directional growth of MoS₂.In Chapter 4,based on the previous research foundation,the MoO2 template-induced MoS₂ lateral epitaxial growth conditions on sapphire substrates with different orientations are systematically investigated by the segmented sulfur-controlled CVD method,and the synergistic control strategy of ’one-dimensional template-two-dimensional epitaxial growth’ is proposed,which has successfully achieved the preparation of single-layer MoS₂ monocrystalline thin films on C-plane sapphire substrates,and has provided a good basis for the preparation of single-layer MoS₂ single-crystal thin films with orientation.The preparation of single-layer MoS₂ monocrystalline film on C-surface sapphire substrate has been successfully achieved,which provides a new idea for the directional epitaxy of other 2D TMDs materials.In Chapter 5,on the basis of summarising the research content of this paper,the main innovations,problems and shortcomings of this paper are described in detail,and finally the future work is expected.更多还原