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基于TFET器件的无冗余翻转触发器
Redundancy-free Flip-flops Based on TFET Devices
【作者】 张颖;
【作者基本信息】 安徽大学 , 集成电路工程(专业学位), 2023, 硕士
【摘要】 近年来,集成电路产业发展迅速,对集成电路的低功耗要求越来越高。触发器作为数字集成电路的基本单元,被广泛运用于大规模和超大规模集成电路之中。因此,降低触发器的功耗对整个数字系统是非常重要的。然而,随着器件特征尺寸进入到纳米级别,金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)的功耗问题和在低压下工作的局限性逐渐显露出来。由于隧穿场效应晶体管(Tunnel Field-Effect Transistor,TFET)特殊的带带隧穿导通机制,使其亚阈值摆幅可以突破60m V/dec的界限,此外,TFET晶体管以其关态电流低、不受短沟道效应影响等优势备受业界关注。因此,利用TFET器件的优势进行低功耗触发器的设计具有重要意义。基于此,本文提出了一种基于TFET器件的无冗余翻转触发器(redundant-transition-free flip-flop based on TFET,TRFF)。本论文的主要工作内容如下:一、首先分析了工艺微缩下,MOSFET器件呈现出的局限性和TFET器件的优势,其次详细介绍了TFET器件的工作原理和输出特性,着重分析TFET器件正偏p-i-n电流对电路的影响。最后分析现有典型触发器的电路结构、工作原理和优缺点。二、在详细分析TFET器件输出特性和触发器机理的基础上,基于TFET器件提出了一种无冗余翻转的触发器电路结构(TRFF),并基于Cadence软件对提出的结构进行功能仿真,仿真结果验证了电路结构的有效性。三、在上述基础上,基于TFET器件,完成了TRFF触发器与典型触发器电路(包括XCFF、TSPC、S~2CFF和CSRFF)的性能对比分析。仿真结果表明,在0.6V的工作电压下,TRFF触发器的平均静态功耗相对于XCFF、TSPC、S~2CFF和CSRFF分别降低了24.5%、4%、19.3%和13.4%;当开关活动因子α为典型值即20%时,触发器的平均功耗相比于XCFF、S~2CFF、CSRFF分别降低了80.5%、21.3%、13.9%和12.1%,相比于TSPC增加了20%,但TSPC通过节点电容保持逻辑状态,而TRFF依靠反馈回路锁存数据;另外,在温度波动和电压波动情况下TRFF均具有较好的稳定性。最后,对本文提出的TRFF结构完成了MOSFET和TFET器件两种器件下的平均静态功耗对比分析,进一步验证了设计的有效性。
【Abstract】 In recent years,the integrated circuit industry has been developing rapidly,and the low power consumption of integrated circuits has become more and more demanding.As the basic unit of digital integrated circuit,the flip-flop is widely used in large-scale and ultra-large-scale integrated circuits.Therefore,it is very important to reduce the power consumption of the flip-flop for the whole digital system.However,as the device feature size enters the nanometer level,the power consumption problem of Metal Oxide Semiconductor Field Effect Transistor(MOSFET)and the limitation of operating at low voltage are gradually revealed.Due to the special band-band tunneling conduction mechanism of Tunnel Field-Effect Transistor(TFET),its sub-threshold swing can break the 60m V/dec limit,in addition,TFET transistor is of great interest to the industry for its low off-state current and not affected by short-channel effects.Therefore,it is important to utilize the advantages of TFET devices for the design of low-power flip-flops.Based on this,a redundant-transition-free flip-flop based on TFET device(TRFF)is proposed in this thesis.The main work of this thesis is as follows:Firstly,the limitations presented by MOSFET devices and the advantages of TFET devices under process miniaturization are analyzed,followed by a detailed description of the operating principle and output characteristics of TFET devices,with emphasis on the impact of positive bias p-i-n current of TFET devices on the circuit.Finally,the analysis of existing typical flip-flop circuit structure,operating principles and advantages and disadvantages.Secondly,based on the detailed analysis of the output characteristics of TFET devices and the trigger mechanism,a redundancy-free flip-flop circuit structure(TRFF)is proposed based on TFET devices,and the functional simulation of the proposed structure is carried out based on Cadence software,and the simulation results verify the effectiveness of the circuit structure.Thirdly,on the basis of the above,the performance comparison analysis of TRFF flip-flop with typical flip-flop circuits(including XCFF,TSPC,S~2CFF and CSRFF)is completed based on TFET devices.The simulation results show that the average static power consumption of TRFF flip-flop is reduced by 24.5%,4%,19.3%and 13.4%compared with XCFF,TSPC,S~2CFF and CSRFF,respectively,at an operating voltage of 0.6 V.When the switching factorαis a typical value of 20%,The average power consumption of the flip-flop is reduced by 80.5%,21.3%,13.9%and 12.1%compared with XCFF,S~2CFF and CSRFF,respectively,and increased by 20%compared with TSPC,but TSPC maintains the logic state through the node capacitor,while TRFF relies on the feedback loop to latch the data;in addition,TRFF has better stability under the temperature fluctuation and voltage fluctuation.Finally,a comparative analysis of the average static power consumption under two devices,MOSFET and TFET,is completed for the TRFF structure proposed in this thesis to further verify the effectiveness of the design.
【Key words】 flip-flop; TFET; low power consumption; Forward p-i-n current;
- 【网络出版投稿人】 安徽大学 【网络出版年期】2025年 03期
- 【分类号】TN386