【作者】 李阳；

【导师】 张洪林； 陈志坚；

【作者基本信息】 华南理工大学 ， 集成电路工程（专业学位）， 2023， 硕士

【摘要】 随着5G无线通信技术的快速发展,对高功率下远距离与大容量的信息传输需求也越来越高。由于氮化镓具有宽禁带、高电子迁移率、强击穿电场等优点,因此第三代化合物半导体氮化镓工艺得到了进一步发展,采用氮化镓工艺设计低噪声放大器也逐渐变为可能。无线通信已经拓展到毫米波频谱资源的开发使用,毫米波频段频谱资源丰富且开发少,能够实现宽带信息传输。由于氮化镓工艺技术的快速进步,不断完善了晶体管的噪声、截止频率等性能,使其能够满足毫米波低噪声放大器的发展需求。作为射频接收系统中第一个模块,低噪声放大器对整个信号链路的灵敏度有着至关重要的影响,因此基于氮化镓工艺的毫米波低噪声放大器研究与设计在通信领域具有非常重要的意义,本文研究与设计了四款低噪声放大器。针对目前Ka波段低噪声放大器增益不够、噪声较大、带宽覆盖小等问题,本文首先提出了一款两级共源共栅结构的低噪声放大器设计,基于OMMIC工艺100nm栅长硅衬底Ga N高电子迁移率晶体管（High Electron Mobility Transistors,HEMT）设计,通过射频开发软件ADS完成电路与电磁仿真,后仿结果表明具有高增益与大带宽的优势,在20-40GHz频带内,小信号增益为21.2-23.5d B,噪声系数为0.78-1.17d B,回波损耗均小于-10d B,OP_{1d B}带内平均约为13.6d Bm,在0-100GHz内稳定因子大于4。针对第一款两级共源共栅结构噪声系数能够进一步优化的问题,改进设计了第二款由共源与共源共栅组成的混合结构低噪声放大器,即在两级共源共栅结构前再级联了一级共源结构。后仿结果表明其具有宽带范围超低噪声与高增益的特点,在21-36GHz频带内,其噪声系数为0.537-0.677d B,小信号增益为28.3-30d B,回波损耗均小于-10d B,在0-100GHz内稳定因子大于3,OP_{1d B}和OIP3平均水平分别为14.5d Bm和24d Bm。针对目前5G商用通信频段24.5-27.5GHz内对氮化镓工艺低噪声放大器的低噪声与高增益性能需求问题,本文采用两种工艺设计了两款共源结构低噪声放大器,实现了带内噪声系数小于1.8d B、增益大于20d B等指标要求。首先采用OMMIC 100nm Ga N/Si HEMT工艺,设计了第三款三级共源结构的低噪声放大器,在24.5-27.5GHz内,其噪声系数为0.636-0.648d B,增益为26.4-26.7d B,回波损耗均小于-10d B,稳定因子大于3.6。其次采用稳懋（WIN）代工厂提供的150nm Ga N/Si C HEMT工艺,设计了第四款四级共源结构低噪声放大器。测试结果表明具有低噪声、高增益与平坦度等性能优势,其带内噪声系数为1.33d B-1.97d B,平均噪声系数为1.69d B,增益为21.4-22.8d B,输入回波损耗小于-15d B,输出回波损耗小于-13d B。本文的主要创新点在于:（1）在基于OMMIC工艺的两级共源共栅结构毫米波低噪声放大器的设计基础上,原创性的提出了第二款由共源与共源共栅构成的改进型混合结构氮化镓工艺毫米波低噪声放大器,使得噪声系数降低了约0.3d B。（2）设计的第四款WIN工艺低噪声放大器整体结构集合了高通滤波匹配结构和栅漏RLC并联负反馈结构,在三个级间匹配均采用高通滤波结构抑制低频增益,其中后两个高通滤波结构还嵌入了并联电阻提高稳定性,后两级放大器采用栅漏RLC并联负反馈结构,最终使整个电路具有较好的增益平坦度与稳定性。更多还原

【Abstract】 With the rapid development of 5G wireless communication technology,the demand for long-distance and large-capacity information transmission under high power is also increasing.Due to the advantages of wide bandgap,high electron mobility and strong breakdown electric field,the third-generation compound semiconductor Ga N process has been further developed,and the design of low-noise amplifiers using the Ga N process has gradually become possible.Wireless communication has been extended to the development and use of millimeter wave spectrum resources,which are rich in spectrum resources and poorly developed,and can realize broadband information transmission.Due to the rapid progress of gallium nitride process technology,the noise and cutoff frequency of transistors have been continuously improved,so that it can meet the development needs of millimeter wave low-noise amplifiers.As the first module in an RF receiving system,the low-noise amplifier has a critical impact on the sensitivity of the entire signal chain.Therefore,the research and design of millimeter wave low-noise amplifiers based on gallium nitride process is of great significance in the field of communication,and four low-noise amplifiers are studied and designed.Aiming at the problems of insufficient gain,large noise,and small bandwidth coverage of Ka-band low-noise amplifiers,this thesis first proposes a low-noise amplifier design with a two-stage cascode structure.Based on the design of 100 nm gate length Ga N High Electron Mobility Transistors(HEMT)on the OMMIC process silicon substrate,circuit simulation and electromagnetic simulation are completed through the RF development software ADS.The post-simulation results show the advantages of high gain and large bandwidth.In the20-40 GHz band,the small signal gain is 21.2-23.5d B,the noise figure is 0.78-1.17 d B,the return loss is less than-10 d B,the average in the OP1 d B band is about 13.6d Bm,and the stability factor is greater than 4 in 0-100 GHz.Aiming at the problem that the noise coefficient of the first two-stage cascode structure can be further optimized,the second hybrid structure low-noise amplifier composed of common-source and cascode is improved,that is,the first-stage common-source structure is cascaded before the two-stage cascode structure.The post-simulation results show that it has the characteristics of ultra-low noise and high gain in the wideband range.In the 21-36 GHz band,its noise figure is 0.537-0.677 d B,the small signal gain is 28.3-30 d B,the return loss is less than-10 d B,the stability factor is greater than 3 in 0-100 GHz,and the average OP1 d B and OIP3 are 16.5d Bm and 26 d Bm,respectively.Aiming at the current low-noise and high-gain performance requirements for gallium nitride process low-noise amplifiers in the 24.5-27.5GHz frequency band of 5G commercial communication.In this thesis,two common-source structure low-noise amplifiers are designed using two processes,and the in-band noise figure is less than 1.8d B and the gain is greater than 20 d B.Firstly,the OMMIC 100 nm Ga N/Si HEMT process was used to design a third low-noise amplifier with a three-stage common-source structure.In the range of 24.5-27.5GHz,the noise figure is 0.636-0.648 d B,the gain is 26.4-26.7d B,the return loss is less than-10 d B,and the stability factor is greater than 3.6.Secondly,the 150 nm Ga N/Si C HEMT process provided by the WIN foundry is adopted.A fourth four-stage common-source structure low-noise amplifier was designed.The test results show that it has the performance advantages of low noise,high gain and flatness,and its in-band noise figure is 1.33 d B-1.97 d B,the average noise figure is 1.69 d B,the gain is 21.4-22.8d B,the input return loss is less than-15 d B,and the output return loss is less than-13 d B.The main innovations of this thesis are as follows :(1)Based on the design of a two-stage cascode structure millimeter-wave low-noise amplifier based on OMMIC process,the second improved hybrid structure Ga N process millimeter-wave low-noise amplifier composed of common-source and cascode is originally proposed,which reduces the noise figure by about 0.3d B.(2)The overall structure of the designed fourth WIN process low-noise amplifier integrates the high-pass filter matching structure and the gate-drain RLC parallel negative feedback structure,and the high-pass filter structure is used to suppress the low-frequency gain in the matching between the three stages,of which the latter two high-pass filter structures are also embedded with parallel resistors to improve stability,and the last two stage amplifiers adopt gate-drain RLC parallel negative feedback structure,which finally makes the whole circuit have better gain flatness and stability.更多还原