【作者】 王超；

【导师】 周见红；

【作者基本信息】 长春理工大学 ， 光学工程， 2023， 硕士

【摘要】 硫系玻璃是一种由元素周期表中VIA族的S、Se和Te三种元素与金属元素(Ge、Ga、As和Sb)形成的无氧红外玻璃。硫系玻璃由于其独特的光学特性和电学特性,逐渐地引起人们广泛的关注和研究。硫系玻璃以其高的线性折射率、超短的响应时间(<200 fs)、高的红外透过率、研发周期短以及原材料选取自安全无毒的元素等优点,最重要的是,硫系玻璃具有非常高的三阶非线性,使得它在光学信息处理、电光开关、激光防护领域中拥有巨大的潜力和研究价值。然而,学者们基于硫系玻璃的研究主要集中在光通信器件和超快全光开关等领域,而针对硫系玻璃的电光调控特性的相关研究却很少。本论文通过分析980 nm光在不同外加电场强度下通过块状Ge28Sb12Se60样品的光强变化,得到了场致双折射现象引起的入射光两个分量的相位差,进而求出块状G e28Sb12Se60样品的直流克尔系数。结果表明,Ge28Sb12Se60具有较大的直流克尔系数K=-8.2383× 10-14 m/V2,相比于氧化物玻璃提高了两个数量级,使其在高速电光调制器件或相关红外波段其他器件制备中具有很大的优势。本论文通过给样品施加不同强度的外电场,研究了块状Ge28Sb12Se60玻璃的电致吸收行为,并且测量了电致吸收引起透射光强的变化,并以此为依据计算了直流克尔系数虚部Ki=3.86939×10-18m/V2。这说明在一定电场范围内,克尔常数的虚数部可以被有效地测量和控制,为相关应用提供了有价值的参考。本论文采用真空热蒸发法制备Ge28Sb12Se60硫系玻璃薄膜样品,采用银膜做电极对Ge28Sb12Se60施加电场改变薄样品的光学各向同性。给出自由空间耦合法的相关理论推导,得到所施加的电场E与反射率之间的关系。依据空间耦合法相关理论,设计测量光路,分别在TM和TE模式下测量反射率相应变化ΔR,可以分别得出Ge28Sb12Se60薄膜的二次电光系数S11和S12,从而得到S44,并最终得到出Ge28Sb12Se60薄膜的直流克尔系数K=-3.3805 × 10-13 m/V2。更多还原

【Abstract】 Chalcogenide glass is an anaerobic infrared glass composed of three elements of VIA family S,Se and Te in the periodic table of elements and metal elements such as Ge,Ga,As and Sb.Chalcogenide glass has attracted more and more attention and research due to its unique optical and electrical properties.Chalcogenide glass is characterized by its high linear refractive index,ultra-short response time(<200 fs),high infrared transmittance,short research and development period,and safe and non-toxic elements selected from raw materials.Above all,chalcogenide glass has very high third-order nonlinearity,which makes it have great potential and research value in the fields of optical information processing,electro-optical switch,laser protection.However,the research based on chalcogenide glass mainly focuses on the fields of optical communication devices and ultra-fast all-optical switches,while there are few studies on the electro-optical control characteristics of chalcogenide glass.In this paper,the phase difference of the two components of the incident light caused by the field-induced birefringence is calculated by analyzing the intensity change of 980 nm light through the bulk Ge28Sb12Se60 sample under different applied electric field intensities.The direct current Kerr coefficient K=-8.2383 ×10-14 m/V2 of the Ge28Sb12Se60 sample is obtained.The results show that Ge28Sb12Se60 has a large DC Kerr factor,which is two orders of magnitude higher than that of oxide glass,making it very advantageous in the preparation of high-speed electro-optical modulator or other devices in the related infrared band.In this paper,the electroabsorption behavior of Ge28Sb12Se60 sample was studied by applying different intensity external electric fields to the sample,and the change of transmitted light intensity caused by electroabsorption was measured.Based on this effect,the imaginary part of DC Kerr coefficient Ki=3.86939×10-18m/V2 was calculated.It shows that the imaginary part of Kerr constant can be effectively measured and controlled within a certain electric field range,which provides valuable reference for related applications.In this paper,Ge28Sb12Se60 thin film samples of chalcogenide glass were prepared by vacuum thermal evaporation.Silver films were used as electrodes to change the optical isotropy by applying an electric field to Ge28Sb12Se60.The theoretical deduction of the free space coupling method is given,and the relationship between the applied electric field E and the reflectance of Ge28Sb12Se60 film sample is obtained.Based on the theory of free spatial coupling,the measuring optical path is designed,and the corresponding reflectance change ΔR is measured under TM and TE modes respectively.The second electro-optical coefficients S11 S12 and S44 of Ge28Sb12Se60 film can be obtained,and the DC Kerr coefficients of Ge28Sb12Se60 film are obtained by K=-3.3805 × 10-13m/V2.更多还原