【作者】 吴平；

【导师】 余旭涛； 钟世昌；

【作者基本信息】 东南大学 ， 电子与通信工程（专业学位）， 2022， 硕士

【摘要】 信息的获取、传输、处理和控制都要求大容量、高速率数据传输和高可靠性的传输系统,宽带功率放大器是整个系统中的关键器件之一。不同波段的宽带放大器有着不同的应用,例如P波段可以更容易获得大功率发射机,而L波段则可以用于卫星接收系统。目前,对功率放大器不仅要求具有高功率,同时为了满足多种应用场景,也要求可覆盖更宽的频带。针对此问题,本论文基于氮化镓工艺,采用阻抗匹配放大器技术以及分布式放大器技术,设计了两款能同时覆盖L和P波段的宽带放大器。论文对氮化镓高电子迁移率晶体管的主要特性,功率放大器设计原理做了理论分析,介绍了各种分布式放大器拓扑结构的原理、优缺点和电路复杂程度,在阻抗匹配式放大器的基础上,提出了三级分布式优化结构,提高了带宽和电路增益,并基于0.35μm氮化镓高电子迁移率晶体管工艺平台,完成了两款宽带放大器的研制与设计。论文首先研究设计了一款频带为0.8-2GHz阻抗匹配放大器,覆盖了L波段和部分P波段,在设计过程中使用Momentum电磁算法对版图进行优化,版图所占面积下降了10.8%,该放大器工作频带更宽,放大器更稳定,体积小,分别较同类型放大器体积缩小19.6%和31.9%,并且漏极效率也更高,最高漏极效率分别高出14.3%和21.7%。在整个工作频带内,输出功率大于39d Bm,漏极效率大于50%,其中在1.0-1.2GHz频段内的效率达到80%以上,最高效率可达到83.2%,充分展示了宽带放大器的高效率特性。并且在1.2GHz条件下,选取漏极电压28V,栅极电压-2.5V,测试条件为P_in=20-31d Bm,间隔1d Bm进行测试,测量结果表明该功率放大器在1.2 GHz时的饱和输出功率为40.8d Bm,漏极效率为83.2%,满足设计要求。然后研究设计了一款频带为0.1Ghz-2.4GHz分布式放大器,覆盖了L波段和P波段。在阻抗匹配式放大器的基础上引入了分布式结构,不过由于传统的分布式结构会导致放大器产生低效率,低功率和低增益的问题,因此本文提出了三级分布式优化结构,使用此结构可以提高功率和效率,降低损耗,提高放大器的稳定性和增益的平坦度。考虑到实际的制作工艺,避免微带线可能产生的寄生电容,本文采用了MIM电容作为微带线的替代。该放大器在整个工作频带内,输出功率大于40d Bm,漏极效率大于38%,其中在0.1-1.5Ghz内,漏极效率均超过44%。在1.4GHz条件下,选取漏极电压28V,栅极电压-2.5V,测试条件为P_in=21-32d Bm,间隔1d Bm进行测试。测试结果表明该功率放大器在1.4 GHz时的饱和输出功率为43.9 d Bm,漏极效率为49%,满足设计要求。更多还原

【Abstract】 The overall trend of the rapid development of modern wireless communication technology is to achieve large capacity,high rate data transmission and high reliability transmission system.The broadband power amplifier is one of the key devices in the whole system.Different band wideband amplifiers have different applications.For example,p-band can be more easily obtained for high-power transmitters,while L-band can be used for satellite receiving systems.At present,power amplifiers are required not only to have high power,but also to cover a wider frequency band in order to meet a variety of application scenarios.To solve this problem,this paper based on gallium nitride technology,using impedance matching amplifier technology and distributed amplifier technology,designed two broadband amplifiers that can cover BOTH L and P bands.This paper on the gallium nitride main properties of high electron mobility transistor power amplifier design principle for the theoretical analysis,this paper introduces the principle,advantages and disadvantages of all kinds of distributed amplifier topology and circuit complexity,on the basis of impedance matching type amplifier,puts forward the three-level distributed optimized structure and improve the bandwidth and gain circuits,Based on the0.35μm gallium nitride high electron mobility transistor technology platform,two broadband amplifiers were developed and designed.Firstly,a 0.8-2ghz impedance matching amplifier is designed,covering L band and part of P band.Momentum electromagnetic algorithm is used to optimize the layout during the design process,and the area of the layout is reduced by 10.8%.The amplifier works in a wider frequency band,the amplifier is more stable,and the volume is small.Compared with the same type of amplifier,the volume is reduced by 19.6% and 31.9% respectively,and the drain efficiency is higher.In the whole working frequency band,the output power is more than39 d Bm,and the drain efficiency is more than 50%.In the 1.0-1.2ghz band,the efficiency is more than 80%,and the highest efficiency can reach 83.2%,which fully demonstrates the high efficiency characteristics of the wideband amplifier.At 1.2GHz,the drain voltage is 28 V and the gate voltage is-2.5V,the test condition is Pin= 20-31 dbm,and the test interval is 1d Bm.The measurement results show that the saturation output power of the power amplifier at1.2GHz is 40.8 d Bm,and the drain efficiency is 83.2%.The amplifier meets the design requirementsThen,a distributed amplifier with a frequency band of 0.1ghz-2.4ghz is designed,covering L band and P band.On the basis of impedance matching type amplifier introduced a distributed structure,but because of traditional distributed structure leads to the amplifier produces low efficiency,low power and low gain,so this article puts forward the three-level distributed optimized structure,using this structure can improve the power and efficiency,reduce loss,improve the stability of the amplifier and gain flatness.In consideration of the actual manufacturing process,to avoid the parasitic capacitance that may be produced by the microstrip line,MIM capacitor is used as a substitute for the microstrip line.In the whole working frequency band,the output power of the amplifier is more than 40 d Bm,and the drain efficiency is more than 38%,and the drain efficiency is more than 44% in the range of 0.1-1.5ghz.Under the condition of 1.4ghz,drain voltage 28 V and gate voltage-2.5V were selected.The test condition was Pin= 21-32 dbm,and the test was conducted at an interval of 1d Bm.The test results show that the saturation output power of the power amplifier is 43.9 d Bm at 1.4GHz,and the drain efficiency is 49%.The amplifier meets the design requirements更多还原