【作者】 王欢；

【导师】 田野；

【作者基本信息】 哈尔滨师范大学 ， 物理学， 2023， 硕士

【摘要】 过渡族难熔金属氮化铪（Hf N）,具有良好的导电性、耐腐蚀性,较高的硬度、熔点,而且与Si和Ga N材料之间更小的热失配和晶格失配,使得Hf N可以被用作以Si为衬底异质外延Ga N的缓冲层材料、Si基Ga N工艺器件中的n型欧姆接触金属电极结构制作中的导电互扩散阻挡层材料。但过去对Hf N的研究主要集中在其作为耐磨和硬质涂层的应用方面,对Hf N薄膜的制备生长研究较少,鉴于磁控溅射法是目前半导体行业广泛应用的薄膜制备生长技术,本论文重点开展Si衬底上磁控溅射法Hf N薄膜制备生长研究,为Hf N薄膜在Si衬底上高质量生长和应用奠定理论和实验基础。本论文利用磁控溅射法在Si衬底上制备生长了Hf N薄膜,研究了不同溅射方式下生长时间、反应气体N₂比、生长温度、溅射功率等不同工艺参数对Hf N薄膜结晶质量的影响。具体的研究内容和成果如下:1.利用射频反应磁控溅射法在Si衬底上制备生长了Hf N薄膜,研究了生长温度、生长时间、反应气体N₂比、溅射功率对Hf N薄膜结晶质量的影响。结果表明:利用射频反应磁控溅射法在Si衬底上制备生长的Hf N薄膜结晶质量较差,没有得到沿（111）面择优取向的Hf N薄膜。尽管反复优化实验参数,最后在550℃生长温度、反应气体N₂比为1:10、生长时间为60 min、溅射功率150 W的工艺参数下,仅是得到了取向杂乱生长的Hf N薄膜。2.利用直流反应磁控溅射法在Si衬底上制备生长了Hf N薄膜,研究了生长温度、生长时间、反应气体N₂比对Hf N薄膜结晶质量的影响。结果表明:在600℃生长温度、100 W溅射功率、反应气体N₂比为1:10、生长时间为60 min工艺参数下,实现了Hf N（111）面择优取向高质量生长。更多还原

【Abstract】 The transition refractory metal hafnium nitride（Hf N）,which has good electrical conductivity,corrosion resistance,high hardness,melting point,and less thermal and lattice mismatch with Si and Ga N materials,Therefore,Hf N can be used as a buffer layer material for heteroepitaxial Ga N on Si substrate and a conductive interdiffusion barrier material for the fabrication of N-type ohmic contact metal electrode structure in Si-based Ga N process devices.However,previous studies on Hf N mainly focused on its application as wear-resistant and hard coating,and few studies on the preparation and growth of Hf N thin film.In view of the magnetron sputtering method is a widely used film preparation and growth technology in the semiconductor industry,this paper focuses on the preparation and growth of Hf N thin film by magnetron sputtering on Si substrate.It lays the theoretical and experimental foundation for the high quality growth and application of Hf N thin films on Si substrate.In this paper,Hf N thin films were grown on Si substrates by magnetron sputtering,and the effects of different process parameters such as growth time,N₂ratio of reactant gas,growth temperature and sputtering power on the crystallization quality of Hf N thin films under different sputtering methods were studied.The specific research contents and achievements are as follows:1.Hf N thin films were grown on Si substrate by RF reactive magnetron sputtering.The effects of growth temperature,growth time,N₂ratio of reactant gas and sputtering power on the crystallization quality of Hf N thin films were studied.The results show that the crystalline quality of the grown Hf N films prepared on Si substrate using RF reactive magnetron sputtering was poor,and the Hf N films with meritocratic orientation along the（111）plane were not obtained.Despite repeated optimization of the experimental parameters,finally only Hf N films with disordered growth of orientation were obtained at the process parameters of 550°C growth temperature,1:10 reaction gas N₂ratio,60 min growth time,and 150 W sputtering power.2.Hf N thin films were grown on Si substrate by DC reactive magnetron sputtering.The effects of growth temperature,growth time,N₂ratio of reactant gas on the crystallization quality of Hf N thin films were studied.The results show that the high-quality growth of Hf N（111）plane is realized under the technological parameters of600℃growth temperature,100 W sputtering power,1:10 ratio of reaction gas N₂and60 min growth time.更多还原