【作者】 张平；

【导师】 李波；

【作者基本信息】 电子科技大学 ， 工程硕士（专业学位）， 2022， 硕士

【摘要】 超大规模集成电路正向着高集成度、多功能化、低成本的方向发展,迫切需要提出新一代高密度封装材料。针对硅芯片的一级封装,需要解决基板和硅基芯片的热失配问题,提高封装的热稳定性。此外,力学性能也是衡量基板材料性能的关键参数。本论文研究了镁铝硅微晶玻璃,提高了其各项性能指标,有望应用于一级芯片封装领域。本实验系统地探究了不同氧化物掺杂对镁铝硅体系析晶机理、微观结构以及热学、力学、介电性能的影响。0.1wt%的Yb₂O₃掺杂有利于印度石的析出,热膨胀系数随之降低到3.40×10^-6/℃,与硅基芯片的热匹配性较好。同时抗弯强度高（182MPa）,介电常数和介电损耗分别为6.18和1.9×10^-3。掺杂0.5wt%的Tm₂O₃具有最佳性能,高抗弯强度（175.8 MPa）,低热膨胀系数(3.16×10^-6/℃),低介电常数（5.99）。Co O掺杂显著改变了镁铝硅微晶玻璃的晶相组成,抑制了印度石的析出,使高膨胀相(Mg Al₂Si₃O₁₀)_0.6相和MgSiO₃大量析出,最终导致整体的热膨胀系数显著增加。当Co O掺杂量为0.1wt%时获得最佳性能,介电常数为5.8,介电损耗为3.2×10^-3,抗弯强度为234.7 MPa。BaO掺杂增加了印度石的析晶峰温度,使其从玻璃中析出变得困难,而有利于中间相(Mg Al₂Si₃O₁₀)_0.6的析晶并稳定了其含量。过量的BaO掺杂产生了新相Ba Mg₂Al₆Si₉O₃₀。当BaO掺杂量为3wt%时获得最佳性能,抗弯强度高达310 MPa、杨氏模量为109.3 GPa、介电常数为6.01、介电损耗为2.5×10^-3、热膨胀系数为4.52×10^-6/℃。最后,根据烧结动力学和析晶动力学模型探究了不同氧化物掺杂对镁铝硅体系烧结过程和析晶机理的影响。基于Arrhenius方程,计算得到了BaO、Yb₂O₃掺杂镁铝硅微晶玻璃的烧结活化能。我们发现0.1wt%的Yb₂O₃或3wt%的BaO可以降低体系的烧结活化能,有助于体系的烧结和的致密化。基于Kissinger析晶动力学分析方法,对BaO、Yb₂O₃掺杂镁铝硅微晶玻璃的析晶活化能进行了表征,结果表明BaO掺杂使体系的析晶活化能增加,进一步说明BaO掺杂在一定程度上抑制了印度石的析出。而Yb₂O₃掺杂显著降低了体系的析晶活化能,增加了体系的结晶度,具有一定程度的晶核剂的作用。更多还原

【Abstract】 VLSI is developing in the direction of high integration,multi-function and low cost,and there is an urgent need to propose a new generation of high-density packaging materials.For the primary packaging of silicon chips,it is necessary to solve the problem of thermal mismatch between the substrate and the silicon-based chip,and to improve the thermal stability of the packaging.In addition,mechanical properties are also key parameters to measure the performance of substrate materials.In this thesis,the Mg O-Al₂O₃-Si O₂ glass-ceramics has been studied,and its various performance indicators have been improved,which is expected to be applied in the field of primary packaging.this thesis systematically explores the effects of different oxide doping on the crystallization mechanism,microstructure,thermal,mechanical and dielectric properties of Mg O-Al₂O₃-Si O₂ glass-ceramics.0.1wt%Yb₂O₃ doping is beneficial to the precipitation of Indialite,the thermal expansion coefficient（CTE）decreases to 3.40×10^-6/℃,which can match the silicon chip.At the same time,it has high flexural strength（182MPa）,The dielectric constant and dielectric loss are 6.18 and 1.9×10^-3,respectively.Tm₂O₃ doped with 0.5wt%has the best performance,high bending strength（175.8 MPa）,low CTE value(3.16×10^-6/℃),low dielectric constant（5.99）.Co O doping can significantly change the crystal phase composition of Mg O-Al₂O₃-Si O₂ glass-ceramics,inhibit the precipitation of Indialite,and precipitate a large amount of high-expansion phase(Mg Al₂Si₃O₁₀)_0.6and MgSiO₃,which eventually leads to a significant increase in the CTE value.When the Co O doping amount is 0.1wt%,the best performance is achieved,the dielectric constant is 5.8,and the dielectric loss is 3.2×10^-3,the flexural strength is 234.7 MPa.BaO doping increases the crystallization peak temperature of Indialite,which makes it difficult to precipitate from glass,and facilitates the crystallization of the intermediate phase(Mg Al₂Si₃O₁₀)_0.6 and stabilizes its content.Excessive BaO doping produces a new phase Ba Mg₂Al₆Si₉O₃₀.The best performance is obtained when the BaO doping content is 3wt%,the flexural strength is 310 MPa,the Young’s modulus is 109.3 GPa,the dielectric constant is 6.01,the dielectric loss is 2.5×10^-3,and the CTE value is 4.52×10^-6/°C.Finally,the effects of different oxide doping on the sintering process and crystallization mechanism of the Mg O-Al₂O₃-Si O₂ system were investigated according to the sintering kinetics and crystallization kinetic models.Based on the Arrhenius equation,the sintering activation energy of BaO and Yb₂O₃ doped Mg O-Al₂O₃-Si O₂glass-ceramics was calculated.We found that 0.1wt%Yb₂O₃ or 3wt%BaO can reduce the sintering activation energy of the system,which is helpful for the sintering and densification of the glass-ceramics.The crystallization activation energy of BaO and Yb₂O₃ doped Mg O-Al₂O₃-Si O₂ glass-ceramics was characterized based on Kissinger crystallization kinetics analysis method.The results show that BaO doping increases the crystallization activation energy of the system.To a certain extent,the precipitation of Indialite is inhibited.However,Yb₂O₃ doping significantly reduces the crystallization activation energy of the system,increases the crystallinity of the system,and has the effect of a nucleating agent.更多还原