【作者】 王莉；

【导师】 张勇；

【作者基本信息】 电子科技大学 ， 电子科学与技术， 2022， 硕士

【摘要】 太赫兹波(THz)具有方向性好、分辨率小、穿透性强等诸多优点,可应用于物体成像、安检、医疗诊断、高速宽带通信等方面。缺少高功率、低成本和便携的室温太赫兹源是限制太赫兹技术发展与应用的主要因素。而倍频器可以利用相对成熟的毫米波放大模块作为驱动源倍频获取太赫兹波,是目前获取太赫兹波的主要途径。考虑到成本以及加工周期等因素,在频率低于400 GHz时倍频器常采用混合集成电路的技术形式。本文重点针对基于混合集成电路的太赫兹三倍频器开展研究,主要包括以下内容:(1)研究温度特性对倍频器性能的影响,将热仿真引入到倍频器的设计中。倍频器在高功率驱动下会使二极管的阳极结温度升高,将导致电子迁移率下降从而影响倍频器性能。本文通过在一定耗散功率下提取二极管阳极结的温度,然后修正管芯与温度有关的本征参数,从而提高倍频器实测与仿真的吻合度,为后续建立准确的二极管模型奠定了坚实的基础。(2)运用半分部半整体的设计方法设计一款220-300 GHz平衡式三倍频器。测试结果表明:倍频器在80 m W输入功率下,在228-280 GHz的频率范围内,倍频器的效率为0.37%-2.3%,回波损耗优于10 d B。倍频器的饱和输出功率为2.1m W@252 GHz。而后对倍频器的温度特性进行后仿真,此时仿真结果更贴近于实测结果,由此验证了热模型的准确性。(3)采用非平衡式结构设计220-270 GHz三倍频器,解决了平衡式结构偏置电路设计困难的难题。测试结果表明:偏置电阻固定为80Ω,三倍频器在220GHz时获得最大效率5.3%,3 d B带宽为21%。综合考虑效率和3 d B带宽,此款倍频器在国内达到相对优秀的水平。该三倍频器采用国产肖特基二极管芯片,验证了国产芯片化的可行性。且实测结果与考虑电流饱和效应以及温度特性的仿真结果趋于一致,验证了电流饱和效应修正本征模型以及热模型的有效性。更多还原

【Abstract】 Terahertz(THz)waves can be widely applied into the areas of imaging,security inspection,medical diagnosis and high-speed broadband communication due to its superiorities of good directionality,high resolution and strong penetration.However,the development of terahertz technology is greatly limited by the lack of stable,reliable and effective terahertz sources.The frequency multiplier can use mature and developed millimeter-wave amplification module as the driving source to generate terahertz waves,which is the main way to obtain terahertz source.Considering the cost and processing cycle,the frequency multiplier often adopts the hybrid integration technology when the operating frequency is lower than 400 GHz.This master’s thesis focuses on the research on terahertz frequency triplers based on the hybrid integration technology,which mainly includes the following contents:(1)The effect of temperature on the performance of frequency multipliers is studied and the thermal simulation is introduced into the design of frequency multipliers.When the multiplier is driven by high power,the anode junction temperature of the diode will increase,which will lead to a decrease in electron mobility and affect the performance of the frequency multiplier.In this thesis,the anode junction temperature under a certain dissipated power is extracted,and then the intrinsic parameters related to the temperature of the diode model are corrected.Finally,the consistency between the measurement and the simulation results of frequency multipliers is improved by the temperature related model which lays the foundation for the following study of accurate diode model.(2)A 220-300 GHz balanced tripler is designed using the Half-Subdivision and Half-Global Design Method.The measured results show that: the tripler has a efficiency of 0.37%-2.3% in the range of 228-280 GHz and the return loss is better than 10 d B with the input driven power of 80 m W.The saturated output power of the tripler is 2.1m W at 252 GHz.Then,a simulation with diode thermal parameters is verified.The thermal simulation results of the frequency multiplier are closer to measurements comparing to the traditional ones,which validates the accuracy of the diode thermal model.(3)An unbalanced 220-270 GHz frequency tripler using domestic planar Schottky diodes is designed and implemented.The unbalanced structure can solve the problem of the bias circuit.The measured results show that: the tripler achieves a maximum efficiency of 5.3% at 220 GHz and a 3 d B bandwidth of 21% with a 80 Ω bias resistance.This work has demonstrated the feasibility of domestic circuit chip.The measured results of the frequency multiplier are consistent with the simulated results considering the current saturation effect and temperature characteristics,which verifies the validity of the current saturation effect correction of the intrinsic model and the thermal model.更多还原