【作者】 刘畅；

【导师】 纪小丽；

【作者基本信息】 南京大学 ， 电子与通信工程（专业学位）， 2021， 硕士

【摘要】 非制冷红外探测器具有体积小、重量轻、成本低、可以室温下工作等优点,在红外侦查、工业检测、消防安防、电力行业等领域有着广泛的应用。微测辐射热计作为非制冷红外探测器最常用结构,近年来发展迅猛。通过标准CMOS工艺制备的微测辐射热计,可实现与后端电路和其他探测器结构高度集成,是非制冷探测器发展的主要趋势。本文基于集成电路工艺和Post-CMOS工艺制备了多晶硅微测辐射热计,根据微测辐射热计的光电响应,进一步设计了模拟和数字读出电路并进行一体化集成。主要研究内容和成果如下:(1)针对CMOS微测辐射热计设计了积分放大电路。该电路采用线性度较好和增益可通过积分电容来控制的电容反馈跨阻抗(CTIA)结构进行设计,不仅可以对探测器输出的微弱电流进行放大还可以稳定探测器电压。Cadence仿真结果表明:在积分电流范围为15～300n A条件下,输出摆幅为0.4～2.1V,非线性误差为0.2%。(2)设计了8bit的计数型ADC用于将探测器的模拟输出电压信号转换为数字电压信号。ADC由比较器和计数器组成,仿真结果表明比较器传输延迟为49ns,分辨率为5m V;计数器仿真结果显示其可以在100MHz的时钟频率下工作,延迟为0.5ns;为将数字信号保存和转成串行输出,在ADC后端进一步设计串行输出寄存器。(3)采用SMIC 0.18μm 1P6M工艺制备了基于40μm×40μm像元的微测辐射热计阵列一体化结构。阵列每行信号输出需要时间为40μs。对第一次流片的积分放大电路进行了测试,测试结果表明,积分放大电路的非线性误差为6.8%,误差主要来源是MOS开关的时钟馈通效应,所以在此次流片时,在MOS开关上添加了虚拟管用来抑制时钟馈通效应。更多还原

【Abstract】 Uncooled infrared detectors have the advantages of small size,light weight,low cost,and can work at room temperature.They are widely used in infrared detection,industrial detection,fire protection and security,and power industry.As the most commonly used structure of uncooled infrared detectors,microbolometers have developed rapidly in recent years.The microbolometer prepared by standard CMOS process can achieve a high degree of integration with the back-end circuit and other detector structures,which is the main trend in the development of uncooled detectors.In this paper,a polysilicon microbolometer is prepared based on integrated circuit technology and Post-CMOS technology.Based on the photoelectric response of the microbolometer,analog and digital readout circuits are further designed and integrated.The main research contents and results are as follows:(1)An integrating amplifier circuit is designed for the CMOS microbolometer.The circuit is designed with a capacitive feedback transimpedance(CTIA)structure with good linearity and gain controllable by integrating capacitors,which can not only amplify the weak current output by the detector but also stabilize the detector voltage.Cadence simulation results show that the output swing is 0.4-2.1V and the non-linear error is 0.2% when the integral current range is 15 n A～300n A.(2)An 8-bit counting ADC is designed to convert the analog output voltage signal of the detector into a digital voltage signal.The ADC is composed of a comparator and a counter.The simulation results show that the comparator has a transmission delay of49 ns and a resolution of 5m V;the counter simulation results show that it can work at a clock frequency of 100 MHz with a delay of 0.5ns;to save and convert digital signals Serial output,the serial output register is further designed at the back end of the ADC.(3)The integrated structure of the microbolometer array based on 40μm×40μm pixels was fabricated using SMIC 0.18μm 1P6 M process.The signal output of each row of the array takes 40 μs.The first tape-out integration amplifier circuit was tested.The test results show that the nonlinear error of the integration amplifier circuit is 6.8%.The main source of error is the clock feedthrough effect of the MOS switch.A dummy switch is added to the MOS switch to suppress the clock feedthrough effect in this tapeout.更多还原