【作者】 杨露；

【导师】 徐军；

【作者基本信息】 大连理工大学 ， 等离子体物理， 2020， 硕士

【摘要】 AlN薄膜属于第三代半导体材料中非常有商业潜力的一种超宽带隙的半导体材料。它兼具多种优异的物理性能,应用领域也非常广泛。本文利用射频反应磁控溅射法以Al靶（99.99%）为溅射靶,高纯Ar为溅射气体,高纯N₂为反应气体,在单晶Si衬底上制备了多晶AlN薄膜。利用X射线衍射（XRD）、台阶仪、透射电子显微镜（TEM）、电子能谱（EDS）、X射线光电子能谱（XPS）、透射谱以及光致发光谱（PL谱）对AlN薄膜的结构进行了综合表征。主要讨论了沉积时间、衬底温度的变化对AlN薄膜的晶体结构和沉积速率的影响。重点研究了氧杂质对AlN薄膜择优取向的影响,并利用透射谱及PL谱对AlN薄膜的禁带宽度及光致发光情况进行了表征。实验结果表明:沉积时间对AlN薄膜的结晶质量以及沉积速率均会产生影响,但对其择优取向无明显影响。AlN薄膜生长方向受衬底温度的影响明显,温度为300℃时,AlN薄膜沿（002）晶面方向生长。沉积速率随衬底温度的升高先增快后减慢,温度升高时,衬底表面的生长因子有较高的能量,促进了粒子的吸附迁移扩散过程。然而过高的温度使脱附作用明显,从而导致了AlN薄膜的沉积速率有所下降。氧杂质对AlN薄膜的择优取向有非常明显的影响,当氧杂质较多时,AlN薄膜沿（100）方向生长;氧杂质较少时,AlN薄膜呈现（002）晶面择优取向。除此之外,氧杂质的存在对AlN薄膜的光致发光也有明显影响。氧杂质含量较多时,AlN存在多出较强的的发光峰;而氧杂质较少时,AlN薄膜的光致发光峰较弱。更多还原

【Abstract】 Aluminum nitride(AlN)thin film is a kind of ultra wide band gap semiconductor material with great commercial potential in the third generation of semiconductor materials.It has a wide range of applications due to its excellent physical properties.In this paper,polycrystalline AlN thin films were prepared on single crystal silicon substrate by RF Reactive Magnetron sputtering,using Al target(99.99%)as sputtering target,high purity argon as sputtering gas and high purity nitrogen as reaction gas.AlN was characterized by XRD,step profiler,TEM,EDS,XPS,Transmission and PL.The effects of deposition time and substrate temperature on the crystal structure and deposition rate of AlN films are discussed.The influence of oxygen contaminant on the preferred orientation of AlN films was studied.The band gap and luminescence of AlN films were characterized by transmission and PL spectra.The experimental results show that the deposition time has an effect on the crystal quality and deposition rate of AlN films,but has no obvious effect on the preferred orientation of AlN films.The substrate temperature has an obvious effect on the preferred orientation of AlN films.When the temperature rises to 300 ℃,AlN films grow along the(002)crystal surface.The deposition rate increases first and then slows down with substrate temperature.This is because the growth factor on the substrate surface has higher energy when the temperature increases,which promotes the adsorption,migration and diffusion of particles.However,too high temperature makes desorption obvious,which leads to the decrease of deposition rate of AlN films.The oxygen contaminant has a very obvious effect on the preferred orientation of AlN films.When there are more oxygen contaminants,AlN films grow preferentially along(100)crystal plane;when there are less oxygen contaminants,AlN films show(002)crystal plane preferred orientation.In addition,the oxygen contaminant also has significant effects on the photoluminescence of AlN films.When there are more oxygen contaminants,there are more strong luminescent peaks in AlN.But the photoluminescence peaks of AlN films are weak and wide when oxygen contaminants are less.更多还原