【作者】 张燕；

【导师】 刘玉岭；

【作者基本信息】 河北工业大学 ， 微电子学与固体电子学， 2016， 硕士

【摘要】 目前,微电子技术按照摩尔定律迅猛发展,特征尺寸不断缩小,晶圆尺寸持续增大,现已进入三维立体封装结构阶段。在3D工艺中,第四代封装技术硅通孔技术是现如今集成电路领域用于芯片堆叠的技术。为了使器件的可靠性与稳定性得到保证,晶圆表面的平坦化要求也相对提高,而铜互连线的化学机械平坦化是实现全局平坦化的关键技术,因此TSV Cu CMP是国际上GLSI的主要攻关技术课题。国际上主流的抛光液是含有苯并三唑(BTA)抑制剂的酸性抛光液,但其存在成分复杂,腐蚀性强,挥发严重等问题。因此针对TSV Cu CMP应研究出新型抛光液、工艺及理论以满足平坦化要求,解决酸性抛光液中存在的问题,进一步满足微电子产业的需要。课题中选用河北工业大学微电子研究所自主研发的碱性抛光液,本材料在不含有抗蚀剂BTA的同时还具有自钝化作用,能够实现较高的平坦化效率。从而通过采用新路线、新方法实现TSV铜布线的全局平坦化。本课题中在分析研究平坦化、自钝化、优先吸附等理论的基础上对TSV Cu碱性抛光液各个组分进行大量的优化实验研究。首先在铜片上进行速率实验的研究,掌握碱性抛光液里各个成分对速率的影响规律;其次在铜电极上进行电化学实验的研究,对抛光液中各个成分的钝化作用进行研究总结;最后在12inch铜布线片上进行平坦化实验研究,得到抛光液中各个成分对平坦化效率影响的规律。结果表明:氧化剂浓度的增加,钝化作用增强,铜的去除速率先上升后下降;随着螯合剂浓度的增加,铜的去除速率先增加后趋于平稳;磨料与活性剂浓度对速率的影响不大;螯合剂与氧化剂的协同作用下能得到较好的平坦化作用,实现高的平坦化。在抛光工艺方面,流量、压力以及转速的增加,铜的去除速率都会有明显增加。通过对各个影响规律进行分析研究,使在工业生产中能够根据具体需要而进行及时调整,满足目前国际上生产的要求。将碱性铜抛光液铜光片上进行应用,结果表明:铜膜的去除速率高达2μm/min;在12inch TSV晶圆片上进行应用,结果表明:抛光后高低差为720?,实现了高的平坦化效率。更多还原

【Abstract】 At present,micro electronics technology in accordance with the rapid development of Moore’s law,the feature size continues to shrink,the wafer size continues to increase,has now entered the stage of three-dimensional packaging structure.In the 3D process,the fourth generation TSV Technology is a technology that is used for chip stacking in the field of integrated circuits.In order to ensure the reliability and stability of the device,on the surface of the wafer planarization requirement is relatively high,the chemical mechanical planarization of copper interconnection is the key technology to achieve global planarization.So TSV Cu CMP is the main research topic on international technology GLSI.Currently TSV Cu CMP is the focus of international research.General international pulp acidity and contain side effects for large inhibitor benzotriazol(BTA)in order to achieve smooth change request.The existence of strong corrosion,composition is complex,high cost,the volatile is serious and so on are the problems to solve.Therefore,the Cu CMP TSV should be developed to meet the requirements of the new polishing liquid,theory and technology,to solve the problem of acid polishing solution,to further meet the needs of micro electronics industry.In this paper,we use the alkaline polishing solution developed by the Institute of microelectronics,Hebei University of Technology,which has a self passivation effect in containing resist BTA at the same time,can achieve high planarization efficiency.By using the new method and the new method,the global flatness of TSV copper wiring is realized.In this paper,based on the theory of flatness,self passivation and preferential adsorption,a large number of optimization experiments were carried out on the Cu TSV alkaline polishing solution.In copper of rate experiment research,grasp the effect of alkaline slurry in each component of rate of;in copper electrode for electrochemical experiments,summarizes the inactivation of each component in the polishing liquid;finally in copper 12 inch wiring sheet aspirant row flat of experimental research,polishing liquid components of planarization efficiency rules.The results showed that: with increasing oxidant concentration of polishing liquid components,passivation effect is enhanced,copper removal rate first increased and then decreased;with the increase of the chelating agent,removal rate increased at first and then tends to saturation;to achieve better planarization is the effect of oxidant and chelating agent,.The content of abrasive has little effect on copper removal rate,but with the increase of abrasive concentration,the planarization capacity enhancement.Active agent content had little effect on copper removal rate.The polishing process,with the increase of pressure,speed,flow,the copper removal rate increased.The influence of various analysis and research,according to the specific needs and enable timely adjustment in industrial production,the production requirements.Alkaline copper slurry applicant on copper wafer,the results showed that the copper film removal rate can be 2μm/min;in 12 inch copper wiring on TSV chip application,the results show that: after polishing step height turns to 720? and meet the requirements of industrial index,to achieve high planarization efficiency.更多还原