【作者】 王倩；

【导师】 常爱民；

【作者基本信息】 新疆大学 ， 材料工程（专业学位）， 2019， 硕士

【摘要】 21世纪以来,随着微型半导体加工、印刷电子以及微电子器件制备等微加工技术的发展,人们对温度传感器的智能化、微型化以及精准化的要求越来越高。传统的负温度系数（NTC）热敏电阻元件大多为圆盘状、杆状和珠状等,其尺寸较大,难以与现代半导体工艺相结合。因此,制备具有体积优势的超薄、超轻的芯片型热敏电阻元件是非常迫切的。本文针对热敏薄片以及薄膜材料的制备与其电学性能开展研究。Mn-Co-Ni-O系材料具有高的稳定性以及优异的热敏特性被广泛应用于NTC热敏电阻元件。本文选取Mn_1.2Co_1.5Ni_0.3O₄作为制备薄片及薄膜型NTC热敏电阻元件的基础材料。采用流延法制备Mn_1.2Co_1.5Ni_0.3O₄热敏薄片,探究了制备热敏薄片的最佳工艺参数,详细分析了不同厚度（120μm、110μm、100μm和90μm）Mn_1.2Co_1.5Ni_0.3O₄热敏薄片结构形貌、电学、响应时间等性质。采用射频磁控溅射法制备了厚度为纳米级的Mn_1.2Co_1.5Ni_0.3O₄热敏薄膜,探究了多孔硅衬底上Mn_1.2Co_1.5Ni_0.3O₄热敏薄膜的最佳生长温度和溅射功率,研究了多孔硅衬底孔隙率（0%、30%和50%）对Mn_1.2Co_1.5Ni_0.3O₄热敏薄膜性质的影响,具体研究结果如下:1.采用流延法制备Mn_1.2Co_1.5Ni_0.3O₄热敏薄片的最佳工艺参数是:流延浆料中粉体含量为2 g,粘结剂含量为4wt%,有机溶剂含量为2 mL,流延速度为7mm/s。依据此工艺参数制备的Mn_1.2Co_1.5Ni_0.3O₄热敏薄片致密度高,薄片平整且厚度均匀。2.通过对比不同厚度（120μm、110μm、100μm和90μm）热敏薄片的结构形貌、电学和响应时间等性质,得到90μm厚度的Mn_1.2Co_1.5Ni_0.3O₄热敏薄片晶粒大小均匀,无明显位错,其相结构为与MnCo₂O₄相似的尖晶石结构。薄片厚度由90μm增加到120μm时,?₂₅由127.0Ω·cm增加到449.7Ω·cm,热敏常数B_25/50由3377.9 K增加到3514.2 K。90μm厚度的热敏薄片Mn³⁺/Mn⁴⁺的比率为0.70,120μm厚度的热敏薄片Mn³⁺/Mn⁴⁺的比率为1.02。此外,90μm厚度的热敏薄片响应时间最快,为0.83 s。3.采用射频磁控溅射法在多孔硅衬底上生长Mn_1.2Co_1.5Ni_0.3O₄热敏薄膜。探究了热敏薄膜的最佳生长温度为150℃,最佳溅射功率为250 W。在不同孔隙率（0%、30%和50%）多孔硅衬底上制备了高质量Mn_1.2Co_1.5Ni_0.3O₄热敏薄膜。随着多孔硅衬底孔隙率的增加,薄膜表面晶粒团聚现象更加明显,热敏常数B_25/50相对较高。更多还原

【Abstract】 Since the 21st century,with the development of micro-processing technologies such as micro-semiconductor processing,printed electronics and microelectronic devicefabrication,peopleareincreasinglydemandingtheintelligence,miniaturization and precision of temperature sensors.Conventional negative temperature coefficient（NTC）thermistors are mostly disc-shaped,rod-shaped and beaded which are large in size and difficult to combine with modern semiconductor processes.Therefore,it is urgent to prepare an ultra-thin,ultra-light chip type thermistors element having a volume advantage.This paper studies the preparation of thermal chips and thin film materials and their electrical properties.Mn-Co-Ni-O materials have high stability and excellent heat sensitive properties and are widely used in NTC thermistors.In this paper,Mn_1.2Co_1.5Ni_0.3O₄ was selected as the basic material for the preparation of chips and thin films NTC electronic components.The Mn_1.2Co_1.5Ni_0.3O₄ chips were prepared by casting method.The optimum process parameters of the prepared chips were investigated.The Mn_1.2Co_1.5Ni_0.3O₄ chips with different thicknesses（120μm,110μm,100μm and 90μm）were prepared.The structural morphology and electrical properties were analyzed in detail.Nano-sized Mn_1.2Co_1.5Ni_0.3O₄ thermistors thin films were prepared by RF sputtering.The optimum growth temperature and power of Mn_1.2Co_1.5Ni_0.3O₄film on porous silicon substrate were investigated.The effects of porous silicon substrates with different porosity（0%,30%and 50%）on the properties of Mn_1.2Co_1.5Ni_0.3O₄ film were studied.The specific research results are as follows:1.Mn_1.2Co_1.5Ni_0.3O₄ thermal chips were prepared by using the casting method.When the powder content in the casting slurry was 2 g,the binder content was 4wt%,the organic solvent content was 2 mL,and the casting speed was 7 mm/s,the prepared Mn_1.2Co_1.5Ni_0.3O₄ thermal ceramic chip had a high density,the chip was flat and its thickness was uniform.2.The morphology,electrical properties and response time of different thickness（120μm,110μm,100μm and 90μm）chips were compared.The grain size of 90μm thick chip was uniform,no obvious dislocation and its phase structure was a single-phase spinel structure similar to MnCo₂O₄.When the chip thickness was increased from 90μm to 120μm,?₂₅5 increased from 127.0Ω·cm to 449.7Ω·cm and the thermal constant B_25/505/50 increased from 3377.9 K to 3514.2 K.The ratio of Mn³⁺/Mn⁴⁺of 90μm thick chip was 0.70,the ratio of Mn³⁺/Mn⁴⁺of 120μm thick chip was 1.02.In addition,the 90μm thick chip thermistor response time is 0.83 s.3.The Mn_1.2Co_1.5Ni_0.3O₄ films were grown on porous silicon substrate using RF magnetron sputtering.The optimum substrate temperature during film growth was150°C and the optimum sputtering power was 250 W.High quality Mn_1.2Co_1.5Ni_0.3O₄films were prepared on porous silicon substrates with different porosity（0%,30%and50%）.With the increase of porous silicon porosity,the agglomeration phenomenon on the surface of the films is more obvious and has a relatively high B_25/505/50 value.更多还原