【作者】 张巍；

【导师】 王玉新；

【作者基本信息】 辽宁师范大学 ， 光学， 2018， 硕士

【摘要】 氧化锌(Zinc oxide,ZnO)是一种具有六方纤锌矿结构的II-VI族直接带隙(3.37eV)金属氧化物,激子束缚能高达60meV,在光电器件的应用上具有很大优势,天然呈n型导电。由于稳定的化学性质和良好的光学、电学特性,并且其自然储备丰富、价格低廉,ZnO被广泛的应用在发光材料、透明电极材料、显示器和窗口材料上。对氧化锌进行合理的掺杂,可以有效改善其光学性能和电学性能,是目前短波长的发光材料领域研究的热点。本文先对薄膜材料进行了介绍,主要包括了薄膜材料的特点和未来前景,接着详细介绍了ZnO材料的结构特征和研究现状,对制备方法进行了比较,最后采用了溶胶-凝胶法制备薄膜。本文以玻璃为衬底,乙酸锌、氯化锂、氯化钾和氯化铵为溶质,乙二醇甲醚为溶剂,乙醇胺为稳定剂制备胶体,采用溶胶-凝胶旋涂法制备了未掺杂的ZnO薄膜和Li-N、K-N共掺的ZnO薄膜,采用了X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光致发光谱(PL)和紫外-可见分光光度计(UV-VIS)的表征手段对样品的晶体结构、表面形貌、发光性能和透过性能进行了测试。测试结果表明:Li-N、K-N元素的共掺,一定程度上能够增强ZnO薄膜在(002)方向的生长。对于Li-N共掺ZnO薄膜,当Li元素的原子比占6at%和8at%的情况下,薄膜的c轴择优取向明显,ZnO的紫外发光强度增强,缺陷发光减弱,当Li元素掺杂量在6at%时薄膜紫外发光最强。对于K-N共掺ZnO薄膜,其(002)衍射峰强度均高于未掺杂的ZnO薄膜,而对ZnO的近带边发光影响不大,K元素的掺杂量在6at%时的近带边发光强度相对最大。两组掺杂元素对于ZnO薄膜的透过性能影响不大,整体的透过率基本维持在80%以上。更多还原

【Abstract】 Zinc oxide(ZnO)is a II-VI direct bandgap(3.37eV)metal oxide with a hexagonal wurtzite structure,its exciton binding energy is as high as 60 meV,which has a great advantage in the application of optoelectronic devices,and it is n-type conductivity in the nature.Due to its stable chemical properties,good optical and electrical properties,and its abundant natural reserves and low cost,ZnO is widely used in luminescent materials,transparent electrode materials,displays and window materials.The proper doping of zinc oxide can effectively improve its optical properties and electrical properties,and is currently a hot topic in the field of short-wavelength luminescent materials.This article first introduced the film material,which mainly include the characteristics and future prospects of thin film materials.Then,the structural characteristics and research status of ZnO materials are introduced in detail,the preparation methods are compared.Finally,the thin film is prepared by sol-gel method.This paper uses glass as the substrate,zinc acetate,lithium chloride,potassium chloride and ammonium chloride as solute,ethylene glycol methyl ether as solvent,and ethanolamine as the stabilizer to prepare colloids.Undoped ZnO thin films and Li-N and K-N co-doped ZnO thin films were prepared by sol-gel spin coating.The crystal structure,surface morphology,luminescence and transmission properties of the samples were measured by X-ray diffraction(XRD),scanning electron microscopy(SEM)and photoluminescence spectra(PL),UV-VIS spectrophotometric(PL),respectively.The results show that the co-doping of Li-N and K-N elements can enhance the growth of ZnO thin films in(002)direction to some extent.For Li-N co-doped ZnO films,when the atomic ratio of Li is 6at% and 8at%,the c-axis preferred orientation of the film is more obvious,the luminescence intensity of ZnO increases and the defect luminescence weakens.When the doping content of Li is 6at%,the UV emission of the film is the strongest.For K-N co-doped ZnO thin films,the(002)diffraction peak intensity is higher than that of the undoped ZnO thin film,but the near-band edge light emission of ZnO has little effect,the near-band luminescence intensity of the K element doped at 6at% is relatively largest.The two groups of doping elements have little effect on the transmission performance of the ZnO thin film,and the overall transmittance is maintained at more than 80%.更多还原