【作者】 董宁；

【导师】 廉刚； 崔得良；

【作者基本信息】 山东大学 ， 材料学， 2018， 硕士

【摘要】 作为光电器件的活性材料,CH₃NH₃PbI₃-xCl_x薄膜具有较长的载流子扩散长度和较高的迁移率,在光电器件领域得到了广泛的关注。本文以CH₃NH₃PbI_3-xCl_x为研究对象,我们提出了一种溶剂辅助热压方法实现了钙钛矿薄膜中晶粒的二次生长,制备出了高质量的钙钛矿薄膜。考察了不同因素对薄膜微观形貌以及结晶性的影响,并探究了其光电探测性能。论文的主要内容如下:（1）使用原位红外光谱分析方法研究了压力对样品稳定性的影响。发现在高压作用下,样品的分解温度显著提高,该特性为热压条件下钙钛矿晶粒的二次生长提供了保障。（2）使用热压方法制备了 CH₃NH₃PbI_3-xCl_x钙钛矿薄膜,并探索了温度、压力、降温时间、恒温时间对薄膜质量及光电器件性能的影响。研究发现,经过热压处理后组成薄膜的晶畴尺寸明显增大,与传统热处理方式得到的钙钛矿薄膜器件相比,光电流、开关比、灵敏度等多个方面的光电性能得到了较大的提高。（3）使用溶剂辅助热压方法制备出了高质量的CH₃NH₃PbI_3-xCl_x钙钛矿薄膜,该薄膜具有晶畴尺寸大（5-10μm）、取向性和平整度高、缺陷密度低、结晶性好、载流子寿命长等特点。并探讨了温度、压力、降温时间、恒温时间对薄膜质量及光电器件性能的影响,优化了实验条件,最终制备出高质量的钙钛矿薄膜。基于该薄膜的平面光电探测器展现出了良好的光电性能:高的开关比（>2.1×104）,快的响应时间（54/63μs）、高的探测率（～1.3 ×1012）等。更多还原

【Abstract】 As active material for optoelectronic devices,the CH₃NH₃PbI_3-xCl_x film has longer carrier diffusion length and high mobility and has been widely concerned in the field of optoelectronic devices.In this work,we choose CH₃NH₃PbI_3-xCl_x as our subject and a solvent-assisted thermal-pressure strategy is developed to achieve the secondary growth of perovskite grains in the films and fabricated high-quality CH₃NH₃PbI_3-xCl_x Films.We investigated the effects of different factors on the microstructure and crystallinity of the films and explored the optoelectronic properties of the films.The results are as follows:（1）We investigated the influence of pressure on sample stability using an in-situ Fourier transformation infrared spectrometer and found that the decomposition temperature of CH₃NH₃PbI₃-xCl,was significantly improved under high pressure.This characteristic provides a guarantee for the second growth of perovskite grains under hot pressure conditions.（2）We fabricate the CH₃NH₃PbI_3-xCl_x perovskite thin films using pressure-assisted space-confined strategy and explored the effects of temperature,pressure,cooling time and holding time on the quality of the film and the properties of the optoelectronic devices.The study found that the grain size of the film obviously increased using pressure-assisted space-confined strategy.Compared to the perovskite optoelectronic devices using conventionally annealed strategy,the optoelectronic properties of the photocurrent,on/off ratio,sensibility have been greatly improved.（3）We fabricate high-quality CH₃NH₃PbI_3-xCl_x solvent-assisted thermal-pressure strategy.The film has large-sized grains（5-10μm）,high orientation and smooth,low defect density,good crystallinity and long carrier lifetime and so on.And we explored the effects of temperature,pressure,cooling time and holding time on the quality of the film and the properties of the optoelectronic devices.We optimized experimental conditions and fabricated high-quality perovskite thin films.As a consequence,the photodetectors based on the high-quality CH3NH3Pbl（3-x）Cl_x films exhibit enhanced photoelectrical performance:high on/off ratio（>2.1×104）,fast response time（54/63 μs）,and high detectivity（～1.3×1012）.更多还原