【作者】 王岩；

【导师】 张文星；

【作者基本信息】 太原理工大学 ， 凝聚态物理， 2017， 硕士

【摘要】 光电子集成技术的不断发展,使硅基发光材料成为广泛关注的焦点。近几十年来,各国学者对硅基发光材料和相关器件进行了研究。研究主要集中在如多孔硅,Si-SiO_x,Si-SiN_x,Si-SiO_xN_y等低维纳米结构材料上。但是,这些材料在实现较高发光效率方面存在不同程度的不足,限制着硅基发光材料的应用。近年来,SiO_xC_y因具有较强白光发射特性引起了各国学者的广泛关注。SiO_xC_y是一种理想的稀土离子掺杂的母体材料,而且SiO_xC_y能很好地控制硅基薄膜中载流子的注入。因此SiO_xC_y在硅基光电集成领域是一种具有应用价值的光源材料。本文主要对掺杂（碳,氮,氧和稀土离子）硅基薄膜的制备与发光特性进行了研究,研究内容如下:（一）利用甚高频-等离子体增强化学气相沉积（VHF-PECVD）技术,以硅烷（SiH₄）,甲烷（CH₄）,氧气（O₂）和氨气（NH₃）等前驱体在为反应气体,沉积通过调控氨气流量制备若干氮掺杂SiO_xC_y薄膜。分析薄膜的光致发光光谱,FTIR光谱以及XPS的测量结果,发现通过调控Si O_xC_y薄膜中的氮含量,薄膜中缺陷发光中心会发生变化,并能够实现较强的白光发射。利用等离子体增强化学气相沉积系统制备了碳掺杂氮氧化硅膜,其中以硅烷（SiH₄）,甲烷（CH₄）,氧气（O₂）和氨气（NH₃）作为前驱体。通过调节甲烷流量,制备了不同碳含量的SiO_xN_y薄膜。分析光致发光光谱和激发光谱结果发现,通过调控薄膜中的碳含量,发光法强度的增强,且发光强度与碳含量的增加具有相同趋势。（二）利用磁控溅射系统制备铕离子掺杂Si O_xC_y薄膜。分析发现铕掺杂SiO_xC_y薄膜的光致发光光谱中具有明显的蓝光发光峰和红光发光峰组成。通过改变溅射功率实现对SiO_xC_y薄膜中铕离子的含量调节,可以实现对发光强度的调节。分析光致发光图可以发现,随溅射功率的增强蓝光发光峰逐渐减弱,而红光发光峰逐渐增强。通过对实验数据进行分析,发现红光增强主要原因是存在从主体材料的缺陷态到Eu³⁺离子的能量转移。更多还原

【Abstract】 With the development of optoelectronic integration,Si-based light-emitting materials have sparked a worldwide interest.Therefore,in the past few decades many researchers have carried out research on Si-based light-emitting materials and devices.The research focused on low-dimensional silicon nanostructure materials such as porous silicon and Si-SiO_x,Si-Si N_x,Si-SiO_xN_y.In fact,these lowdimensional silicon nanostructure materials are in varying degrees of disadvantages in improving the efficiency.In recent years,carbon dioxide has a strong white light emission characteristics caused widespread concern in the world.It’s the best way to improve the carrier injection efficiency of the device and reduce the collision ionization effect of the hot electrons,so that the realization of efficient electroluminescent device can be realized.In our works,we prepared doped silicon oxycarbide（SiO_xC_y）films,and analysed the PL（Photoluminescence）mechanism of the system.The main contents in this thesis are as follows.（1）Nitrogen doped SiO_xC_y films were deposited in a plasma enhanced chemical vapor deposition（PECVD）system.The nitrogen doped SiO_xC_y films were deposited by using silane（SiH₄）,methane（CH₄）,oxygen（O₂）and ammonia（NH₃）as source gases in the PECVD reactor.The flow rate of Si H₄,O₂ and CH₄ were fixed,while the flow rate of NH₃ was varied.Based on the PL results,XPS results and FTIR results,efficient emission of white light can be seen.Carbon doped SiOxNy films were deposited in a plasma enhanced chemical vapor deposition（PECVD）system.The Carbon doped SiOxNy films were deposited by using silane（SiH₄）,methane（CH₄）,oxygen（O₂）and ammonia（NH₃）as source gases in the PECVD reactor.Based on the PL and PLE results,it was found that the enhancement of the intensity of the luminescence method was significantly dependent on the increase in carbon content.（2）Europium doped SiO_xC_y films were deposited in a magnetron sputtering system.From analysis of luminescence spectra,the spectra of all the Si C_xO_y:Eu films contain two PL band,the blue band and red band,respectively.With increasing the Eu content,the red PL intensity enhanced,while the blue PL intensity gradually decrease.By varying the condensation of Eu ions in the SiO_xC_y films,the intensity of luminescence can be adjusted.It was found that there is energy transfer for the transition of Eu³⁺ ions between the defect states.更多还原