【作者】 徐晓云；

【导师】 王雄； 张艳鸽；

【作者基本信息】 南京理工大学 ， 材料学， 2016， 硕士

【摘要】 太阳能可以利用的形式主要包括热能利用、生物化学能利用、机械能利用以及光能的利用。其中利用太阳能的光生伏打效应来进行发电,即通常所说的太阳能电池,是目前利用太阳能的主要途径之一。但是,目前限制太阳能电池发展的因素还有很多,例如制备工艺繁琐、能耗高、成本高等。寻求一种简单、无污染、低成本、低能耗的制备方法合成具有较好光电性能的半导体材料成为了太阳能电池研究的关键。本论文对硫化物异质结薄膜的制备进行了研究,并进一步地将其应用薄膜太阳能电池中,对电池器件的性能参数进行了测试。本论文的主要研究内容归纳如下：(1)在FTO导电玻璃基底上溅射一定厚度的金属镉薄膜,采用简单的化学气相沉积法一步合成了CdS纳米结构薄膜。再通过超声辅助,在室温下经阳离子交换制备CdS/Ag2S异质结。详细分析不同反应时间对产物薄膜的影响,并做了一系列的表征和光电性能测试。实验结果表明CdS/Ag2S异质结薄膜致密,颗粒粒径在200～400 nm之间,薄膜表现出增强的可见光吸收,其光电流密度为30.0μAcm-2是CdS薄膜的2.3倍。通过CdS/Ag2S异质结薄膜与P3HT的杂化,组装成无机-有机太阳能电池后,测得的电池性能参数为：开路电压为0.082 V,短路电流密度为0.192 mAcm-2,填充因子为0.261,转化效率为0.0046%,其光电转换效率是CdS薄膜的2.4倍。(2)在FTO导电玻璃基底上溅射一定厚度的金属锡薄膜,采用简单的化学气相沉积法一步合成了SnS2纳米结构薄膜。在SnS2薄膜上溅射不同厚度单质锡,通过高温固相反应生成SnS2/SnS p-n异质结薄膜。实验结果表明SnS2/SnS异质结薄膜致密均匀无裂痕,在300～1000 nm波长范围内表现出很强的吸收,并且有很好的光电流响应。组装成无机p-n结太阳能电池后,测得的电池性能参数为：开路电压为0.159 V,短路电流密度为0.216mAcm-2,填充因子为0.17,转化效率为0.006%,通过初步优化器件,得到较优的转化效率为0.011%。(3)同样采用离子交换法制备CdS/CuS异质结薄膜,调控反应温度和反应时间,在温度为40℃,时间为40 min制备出致密均匀无裂痕的CdS/CuS异质结薄膜。通过一系列的表征和光电性能测试。实验结果表明CdS/CuS异质结薄膜的光电流密度达到25.0μAcm-2,是CdS薄膜的2倍。更多还原

【Abstract】 The forms of solar utilization include thermal energy, biochemical energy, mechanical energy and optical energy. Making use of solar photovoltaic effect to generate electricity, which is known as solar cell, is one of the main ways to use solar energy. However, the development of solar cells is restricted in many aspects at present, such as complex production process of raw materials, and high energy consumption, high production costs, and so on. The key of the solar cell research is preparation of new semiconductor materials with excellent optical properties, by using low-temperature, environmental benignity, low-cost and low-energy-consumption methods. In this paper, the preparation of sulfide heterojunctions was studied and further to be applied to thin film solar cells, and the performance parameters of the battery device was tested at last. The main contents of this paper were summarized as follows:(1) Cadmium metal was sputtered and the CdS nanostructure films on FTO conductive glass substrate were synthetised by simple chemical vapor deposition. Then through ultrasound-assisted, CdS/Ag2S heterojunctions were prepared by ion exchange at room temperature. The effect of different reaction time on the product of the films was detailedly analyzed and a series of characterization and photoelectric performance tests were made. Experimental results show that CdS/Ag2S heterojunction films were dense and composed of nanoparticles with size between 200～400 nm. Films exhibited enhanced visible light absorption and 2.3 times photocurrent response than the pure CdS films with 30.0 μAcm-2 photocurrent density. Inorganic-organic solar cells were assembled with hybridization of CdS/Ag2S heterojunction and P3HT. The parameters of above battery device were followed: an open circuit voltage (Voc) of 0.082 V, a short circuit current density (Jsc) of 0.192 mAcm-2, a fill factor (FF) of 0.261 and power conversion efficiency(PCE) of 0.0046%, which was 2.4 times than CdS film.(2) Tin metal was sputtered and the SnS2 nanostructure films on FTO conductive glass substrate were synthetised by simple chemical vapor deposition. Then tin films with different thickness were purtted on SnS2 nanostructure films and the SnS2/SnS p-n heterojunctions were prepared by high-temperature solid phase reaction. Experimental results show that SnS2/SnS heterojunction films exhibited a dense and uniform morphology, enhanced visible light absorption between 300～1000 nm and stronger photocurrent response. The p-n junction solar cells were assembled and the parameters of above battery device were followed:an open circuit voltage (Voc) of 0.159 V, a short circuit current density (Jsc) of 0.216 mAcm-2, a fill factor (FF) of 0.17 and power conversion efficiency(PCE) of 0.006%. We get better conversion efficiency of 0.011%by preliminary optimizing devices.(3) The CdS/CuS heterojunctions were also prepared by ion exchange. The reaction temperature and reaction time were regulated and controled at 40℃ and 40 min respectively, preparing a dense and uniform CdS/CuS heterojunction films. Through a series of characterization and photoelectric performance tests, the results show that the photocurrent density of CdS/CuS heterojunction was up to 25.0 μAcm-2, which was 2 times than CdS film.更多还原