【作者】 张丹；

【导师】 李明； 高立明；

【作者基本信息】 上海交通大学 ， 材料工程， 2015， 硕士

【摘要】 自1985年GaAs/AlGaAs量子阱被证实对长波红外光有吸收作用以来,GaAs体系的超晶格量子阱材料以其稳定性好易于实现器件工艺、均匀性好易于制备大面阵焦平面的优势,逐渐被广泛应用于红外探测器的研制,目前基于GaAs/AlGaAs多量子阱材料的红外探测器已开始向多波段、太赫兹特性方向发展。本文系统研究了GaAs/AlGaAs这一典型超晶格量子阱材料从结构设计、材料表征到性能测试的实验过程及结果分析,为后期器件设计的精确实现提供理论依据。论文主要包括三个部分:第一部分理论介绍。包括对GaAs/AlGaAs红外探测器、超晶格量子阱材料的发展历程及现状的概述,及分子束外延(MBE)生长技术、表面形貌观测、结构参数测定、光致发光性能的实验方法简介。第二部分计算模拟。通过对量子阱中能带结构的计算模拟,分析了结构参数对红外探测波长的影响,结果表明红外探测峰值波长随垒高的增大而减小,随垒宽增大而增大,但影响不大。超晶格结构中随阱宽增大,红外探测峰值波长增大;多量子阱结构中趋势相反。第三部分实验分析。对MBE生长的GaAs/AlGaAs超晶格量子阱样品进行表面形貌、结构参数等材料表征,结果表明样品表面平整致密,呈二维层状生长形貌,结构参数与设计值相近,样品具有良好的均匀性及平整度。光致发光谱获得了掺杂GaAs及GaAs/AlGaAs量子阱中的载流子带间跃迁辐射发光峰,理论计算的能级间距与发光峰能量符合得较好。更多还原

【Abstract】 Since GaAs/AlGaAs quantum well was proved to be able to absorb long- wavelength infrared, GaAs-based superlattice and quantum well materials have been widely used for infrared detectors’ development as they’re stable for device technology and uniform for large-area focal plane array. Currently GaAs/AlGaAs multiple quantum well infrared detectors are leading to multi-band and THz characteristic area. This paper systematically studied the structure design, material characterization and performance testing of GaAs/AlGaAs superlattice and quantum well material, providing a theoretical basis for the accurate realization of the device design. This paper involves three parts as follows:The first part is theoretical introduction, including the development and current situation of infrared detectors and GaAs/Al GaAs superlattice and quantum well material, as well as the introduction of manufacturing and testing methods.The second part comes for simulation of the band structure in the quantum well. The results indicate that infrared detective peak wavelength decreases as the barrier height increasing. The barrier width’s increase leads to the increase of the wavelength, but the influence is light. The influence of the well width is complicate as the wavelength has the same change with the well width in superlattice structure while the trend is opposite in the multiple quantum wells structure.The last part is the testing results analysis. Surface morphology testing results indicate that the specimens show two-dimensional layered growth morphology with good uniformity and flatness. The real structure parameters are similar to the design values. Room-temperature photoluminescence spectra obtains interband transition emission peak with energy values in accordance with theoretical values.更多还原