【作者】 王军；

【导师】 刘兴辉；

【作者基本信息】 辽宁大学 ， 微电子学与固体电子学， 2015， 硕士

【摘要】 空间辐射环境中的带电粒子对太空中飞行的航天器的性能和寿命有着重要的影响。随着集成电路越来越广泛的应用,航天器中所携带的电子设备越来越容易受到空间带电粒子的干扰。这些干扰中由于单粒子翻转效应引起的故障变得越来越不可忽视,所以需要研究和评估。目前评估单粒子翻转效应的方法有空间实验、地面实验和模拟等,由于空间实验和地面实验的成本高周期长,模拟方法既方便又快捷,所以有必要对对单粒子翻转效应进行模拟研究。本文介绍了研究单粒子翻转效应的历史与现状,分析了单粒子翻转效应的机理,探讨了单粒子翻转效应的研究方向和方法。对所采用的仿真软件进行了简单介绍,并采用建模仿真的方法研究了硅体器件的单粒子翻转效应,确定了影响单粒子翻转效应的主要因素。仿真结果表明:工作电压越大器件的抗单粒子翻转性能越强;带电粒子的线性能量传递系数越大器件越容易发生翻转;重离子射入器件敏感区的有效路径越长器件越容易发生翻转等;利用ISE-TCAD软件,对SOI器件进行了建模仿真,并分析比较了基于硅体器件和SOI工艺器件在相同因素影响下的抗单电子翻转性能。仿真结果表明SOI工艺器件的抗单粒子翻转性能相比硅体器件有了极大的提升。更多还原

【Abstract】 Charged particles in the space radiation environment have significant influence on the performance and lifetime of the flying spacecraft in space. With the increasingly widely application of integrated circuits, electronic equipment in spacecraft is more and more susceptible to interference by the charged particles in space. Further studies and evaluations need to be carried out as failures caused by single event upset(SEU) cannot be ignored. Currently, methods to assess the effect of single event upset include space experiments, ground tests and computer simulation. It is necessary to conduct a simulation study on SEU as such method is easy and quick, and space experiments and ground tests require high costs and take a long time to finish.The paper introduces the history and status quo of studies on SEU, analyzes its mechanism and discusses research directions and methods of SEU. It made a brief introduction of the simulation software used. Modeling and simulation are used to research the SEU of bulk silicon devices, which help determine the factors that affect SEU. Simulation results showed that the higher the working voltage of a bulk silicon device, the stronger the anti-SEU. The device is more prone to upset with a high linear energy transfer coefficient in charged particles. The longer the effective path of injection of heavy ions into the sensitive areas of the device, the easier the device upsets. The ISE-TCAD software is employed to conduct modeling and simulation of SOI-based devices, and analyze and compare the anti-SEU of bulk silicon devices and SOI-based devices under different factors. Results indicated that the anti-SEU of SOI-based devices has greatly improved compared with that of bulk silicon devices.更多还原