【作者】 周鹏；

【导师】 马建国；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2014， 硕士

【摘要】 目前，随着科学技术的发展，手机、无线局域网、蓝牙、射频识别等，己经成为人们日常生活中不可或缺的重要组成部分。其中手机、基站等设备对效率的要求愈来愈高，如何延长移动设备的电池寿命和节省成本已经成为主要研究方向。在这些无线通信设备之中，射频模块耗去了大量能量，而能否实现低功耗和高效率的特性主要取决于设备中的射频功率放大器，所以高效功率放大器的研究与设计越来越受到业界的关注。目前所有形式的功率放大器中，只有开关类功率放大器能够实现令人满意的高效率，其可以分为D类、E类、F类、J类和Continuous F类（Continuous F类可归为F类）。开关类功率放大器的晶体管被驱动在开关状态，其工作状态只有“开”与“关”两种情况，在理想情况下晶体管漏极的电压波形和电流波形不存在交叠现象，因此晶体管上的能量损耗为零，理想的效率能达到100%。本文在深入分析了各类开关类功率放大器的工作原理和基本特点的基础之上，提出了一种新型的电流模式D类功率放大器设计方法和一种双级高效B+F类功率放大器电路结构，并根据该设计方法和结构，使用GaN HEMT晶体管设计了两个工作在2.65GHz的大功率高效开关类功率放大器。本文对双级B+F类功率放大器进行了实物制板和测试，其测试结果与仿真结果相吻合。另外本文还详细介绍了功率放大器的设计、制作、测试和调试的具体流程。在2.65GHz，两个功率放大器均取得了令人满意的输出功率和效率指标，其中电流模式D类功率放大器在仿真时具有73%的功率附加效率（PAE）、12.3dB的功率增益和10W以上的输出功率，双级B+F类功率放大器在测试时具有65.69%的PAE、22.5dB的功率增益和10W以上的输出功率。更多还原

【Abstract】 At present, with the development of science and technology, mobile phone,wireless local area network, bluetooth, radio frequency identification etc., have beenan indispensable part in people’s daily life. Mobile phones and base stations’ pursuitof efficiency is becoming increasingly higher, and prolonging the battery life ofmobile devices and reducing cost are being a main research direction of wirelessindustry. RF modules of these wireless communication devices cost a lot of power.Realizing low power consumption and high efficiency mainly depends on poweramplifiers (PAs) of these devices. As a result, research of high-efficiency PAs has gotmore and more attention of the industry.At present, only Switching-Mode Power Amplifiers (SMPAs) can achievesatisfactory efficiency. SMPAs can be divided into Class D, Class E, Class F, Class Jand Continuous Class F. In SMPAs, active devices are drove as switches, and theworking state of transistors is either on or off. As a result, there is no overlap betweenthe drain voltage and drain current, and the power loss on transistors is zero. In theorythe drain efficiency of SMPAs can reach100%.A novel design method of current-mode Class D PA (CMCD PA) and a newtwo-stage high-efficiency Class B+F PA structure are proposed in this paper, on thebasis of in-depth analysis of the working principle and the basic characteristics of allkinds of SMPAs. According to this design method and this structure, two high-powerhigh-efficiency SMPAs working at2.65GHz using GaN HEMT were designed. Thetwo-stage high-efficiency Class B+F PA has been manufactured and tested, and thetest results agree with the simulation results. This paper also introduces the design,manufacture, testing and debugging process of these two PAs in detail. At2.65GHz，both PAs achieve satisfactory output power and efficiency. The CMCD PA has73%power added efficiency (PAE)，12.3dB power gain and10W output power insimulation，and the two-stage Class B+F PA has65.69%PAE,22.5dB power gainand10W output power in test.更多还原