【作者】 张松；

【导师】 崔碧峰；

【作者基本信息】 北京工业大学 ， 微电子学与固体电子学， 2014， 硕士

【摘要】 半导体激光器具有体积小、功耗低、寿命长、电光转换效率高、覆盖的波段范围广、价格便宜等优点，在光纤通信、激光存储、激光显示、激光打标、材料处理、机械加工、生物医学和军事等领域有着广泛的应用。随着实际应用的不断拓展，对大功率半导体激光器的性能提出了更高的要求，尽可能提高半导体激光器的输出功率、改善半导体激光器的光束质量一直是半导体激光器研究的重要方向。在光纤激光器泵浦以及半导体激光器直接激光加工的推动下，对大功率单发射条半导体激光器的需求不断增长。本文主要对976nm光纤耦合用大功率单发射条半导体激光器进行了研究。经过理论分析和实验验证，为了实现连续12W的大功率输出，设计制备了条宽为100μm，腔长为4000μm的976nm非对称大光腔结构单发射条半导体激光器。同时，为了提高单发射条半导体激光器的腔面光学灾变性损伤(COD)阈值，研究了采用腔面非注入区技术提高半导体激光器COD阈值的方法，在激光器腔面附近引入了25μm的腔面非注入区，以限制载流子注入腔面，减少腔面处热量的产生，并提出了一种新型腔面非注入区窗口结构，通过在非注入窗口区刻蚀脊型结构，来限制光束在水平方向上的发散，在提高了器件COD阈值的同时，改善了激光器的光束质量。本论文的研究工作主要包括：(1)设计并制备了976nm非对称大光腔波导结构的半导体激光器外延片，大光腔结构增大了器件的出光面积，提高器件的COD阈值，同时非对称波导结构抑制了高阶模的激射。(2)经过理论分析和实验验证，确定976nm大功率单发射条半导体激光器的器件参数和制备工艺，并对制备的器件进行了测试分析。(3)为了进一步提高976nm大功率单发射条半导体激光器的COD阈值，在器件的腔面附近引入了25μm的腔面非注入区，并采用腔面附近介质钝化、腐蚀高掺杂欧姆接触层的方法制备了具有25μm的腔面非注入区，并对其进行了测试分析。(4)针对腐蚀高掺杂欧姆接触层形成腔面非注入区器件在大电流下工作远场水平发散角过大的问题，提出了非注入窗口区引入脊型结构的新型腔面非注入区窗口结构，减小工作电流的变化对光束水平发散角的影响，解决水平发散角随工作电流较大范围变化的问题，改善了光束质量。更多还原

【Abstract】 Semiconductor lasers have many advantages such as small size, low powerconsumption, long lifetime, high electro-optical conversion efficiency, widewavelength coverage, cheap price and so on. They are widely used in many fieldssuch as optical fiber communication, laser storage, laser display, laser marking,machining, biomedical and military. With the continuous expansion of practicalapplication, the performance of high-power semiconductor lasers has been putforward higher requirements. Improving the output power and beam quality ofsemiconductor lasers has been an important research direction of the semiconductorlaser.Driven by the optical fiber laser pumping and direct semiconductor laserprocessing, the demand for high-power single emitter semiconductor lasers is growingrapidly. In this paper, the976nm high-power single emitter semiconductor laser usedin fiber-coupled is studied. Through theoretical analysis and experimental verification,in order to achieve a continuous output power of12W, a976nm high-power singleemitter semiconductor structure with100μm strip width,4000μm cavity length andasymmetric large optical cavity waveguide is designed and fabricated. Meanwhile, inorder to improve the catastrophic optical damage (COD) threshold of single emittersemiconductor laser, non-injection regions near cavity facets are studied. Byintroducing non-injection regions with25μm length near cavity facets, no carriers aresupplied to the facet regions by current injection. Moreover, a novel structure ofnon-injection regions near cavity facets is introduced. Ridge waveguide is employedin non-injection regions, which improves the COD threshold and narrows thehorizontal far field divergence angle. The main contents of this paper are as follows:(1) The976nm semiconductor laser wafer with asymmetric large optical cavitywaveguide structure is designed and fabricated, in which the large optical cavitystructure is used to raise the COD limit, and the asymmetric waveguide is used toinhibit the lasing of higher order modes.(2) Through theoretical analysis and experimental verification, the deviceparameters and preparation process of976nm high-power single emittersemiconductor laser are identified. The device fabricated under this preparationprocess is tested and analyzed. (3) In order to improve the COD threshold of single emitter semiconductor laser,non-injection regions with25μm length are introduced near cavity facets.Non-injection regions are manufactured by dielectric passivation near cavity facetsand etching the p＋-GaAs layer near cavity facets, and devices fabricated with thisstructures are tested and analyzed.(4) To solve the problem that the horizontal far field divergence angle of thedevice with non-injection regions fabricated by etching the p＋-GaAs layer near cavityfacets is too large, a novel structure of non-injection regions near cavity facets withridge waveguide is introduced.更多还原