【作者】 杨磊；

【导师】 宋晨路； 刘涌；

【作者基本信息】 浙江大学 ， 材料科学与工程， 2014， 硕士

【摘要】 透明导电氧化物(简称TCO)薄膜是当今半导体领域研究热点,具有可见光区透过率高、电阻率低等优异的光电性能。广泛应用于平板显示器、太阳能电池等领域。目前可成熟制备的TCO薄膜包括ITO、FTO、AZO薄膜,但它们都各自存在着难以克服的缺点。Nb:TiO2(简称NTO)薄膜是近年来新发现的一种TCO薄膜,具有导电性好、成本低、无毒等优点,具有广阔的应用前景,然而,人们对其认识还不充分,制备技术更是很不成熟,有必要对NTO薄膜进行深入的研究。本文采用APCVD法,在玻璃基板上成功制备了均匀致密的NTO薄膜。通过研究反应温度、气体流量等工艺参数对薄膜的影响,探索了制备NTO薄膜的最佳工艺参数以及气体流量调控规律。同时研究高真空退火、H2退火等热处理方式对薄膜形貌、结构以及对光电性能的影响。结果表明：随反应温度升高,薄膜晶粒有细化的趋势,透过率逐渐增大,但550℃之后开始出现不均匀的块状和条状大颗粒,导致薄膜变得不再均匀致密,500℃-550℃是最佳反应温度区间,易沉积晶粒细小、均匀致密、可见光区较高透过率的NTO薄膜。当总气体流量一定时,增大TiO2的量,薄膜晶粒有逐渐变小且均匀的趋势,透过率逐渐增大,同时薄膜的结构会由金红石相向锐钛矿相过渡；而当TiCl4的量一定时,增大NbCl5的气体流量,薄膜晶粒同样存在变小且均匀的趋势,膜厚会相应减小,透过率逐渐增大；通过气体流量的控制可实现Nb掺杂浓度的可控调节。高真空退火可以显著改善晶体质量,薄膜晶粒会变得细小均匀致密,透过率也会大幅提高；相比较于经过掺杂但未经过H2退火的NTO薄膜和经过H2退火但未掺杂的Ti02薄膜,经过掺杂和H2退火的NTO薄膜其电学性能得到明显改善。更多还原

【Abstract】 Transparent conductive oxide films(referred TCO)are a hot topic in semiconductor industry, they have excellent optical and electrical properties, such as high transmittance in the visible region, low resistivity, have been widely used in the area of flat panel displays, solar cells and so on. TCO films which can be mature prepared currently include ITO, FTO, AZO films, but they all have shortcomings difficult to overcome. NbiTiO2(referred NTO) films are newly discovered TCO films in recent years with the advantages of good conductivity, non-toxic and low cost, have broad application prospects, but people’s understanding about them is still not sufficient, the preparation technologies are also not mature, it is necessary to study NTO films.In this paper, we successfully prepared NTO films consisted of small uniform dense grains on glass substrates using APCVD method, studied the influence of reaction temperature, gas flow on films and explored the optimum process parameters and the gas flow control laws. Meanwhile, we studied the influence of heat treatment, on the film morphology, structure, and improvement to optical and electrical properties.The results show that:with the increase of reaction temperature, the grains of NTO films become smaller and the transmittance become better, but above550℃, due to the decomposition of precursor, films will not be uniform and dense, The optimum reaction temperature is500℃-550℃, it’s easy to deposit films consisted of small uniform and dense grains with high transmittance in the visible region. As the increase of TiCl4, the grains of films become smaller and more uniform and the transmittance becomes better, while the structure of the films will change from rutile to anatase phase; when the amount of TiCl4is fixed, with the increase of gas flow of NbCls, the grains of films will also become smaller and more uniform, and the thickness is reduced accordingly, meanwhile, the transmittance gradually increases; we can achieve the adjustment of Nb concentration by the control of gas flow. High vacuum annealing can significantly improve the crystal quality, compared to Nb:TiO2film without H2annealing and un-doped TiO2films after H2annealing, the electrical properties of Nb-doped Nb:TiO2film after H2annealing have been obviously improved.更多还原