【作者】 李辉；

【导师】 李合琴；

【作者基本信息】 合肥工业大学 ， 材料学， 2013， 硕士

【摘要】 本文主要采用射频磁控溅射的方法在单晶Si（100）和不锈钢基底上在室温的条件下制备了SiC薄膜，经过后期的高温退火处理得到了结晶态的SiC薄膜。利用XRD、FTIR、AFM、SEM、PL、XPS、多功能材料表面性能试验仪以及显微硬度计等分析测试手段对制备的SiC薄膜进行检测，研究了退火气氛和退火温度对SiC薄膜结构和性能的影响。为了解决SiC薄膜与不同基底之间的结合强度较差的问题，在Si基体上，引入了AlN薄膜作为中间过渡层；在不锈钢上，采用Ti/TiN、Al₂O₃、Ni-P合金作为中间过渡层，提高了SiC薄膜与基体的结合性能。具体主要内容如下：第一章阐述了SiC材料的晶体结构、物理和化学性能、应用和展望以及薄膜的常见制备方法。同时对本文的研究背景、主要内容和创新点作了一定的介绍。第二章介绍了磁控溅射和电子束蒸发的原理以及薄膜的制备方法，另外还对一些常见薄膜的测试方法作了简单的介绍。第三章讨论了在单晶Si（100）上制备SiC薄膜退火的工艺。采用XRD、FTIR、SEM和XPS对薄膜的结构和形貌进行表征，研究了不同的退火气氛和不同的退火温度对SiC薄膜的结构和性能影响。第四章研究了在单晶Si基底上，引入AlN薄膜作为中间过渡层来改善SiC薄膜与基体之间有较大失配的问题。采用PL、AFM和多功能材料表面试验仪分析了SiC单层膜和AlN/SiC双层膜。第五章利用Ti/TiN、Al₂O₃、Ni-P作为中间过渡层，改善了在不锈钢上直接制备SiC薄膜易脱落的问题，简单的介绍了中间过渡层制备和原理。第六章主要是将不锈钢上制备的SiC单层膜和Ti/TiN/SiC、Al₂O₃/SiC、Ni-P/SiC多层膜的结构和性能进行对比，采用XRD、AFM、显微硬度计和多功能材料表面试验仪对单层膜和多层膜的结构、表面和性能进行分析，总结出各种SiC多层膜较SiC单层膜在结构和性能上更加优越。第七章总结与展望更多还原

【Abstract】 In the paper, SiC thin films were prepared on Si（100） and stainless steelsubstracts at room temperature by RF magnetron sputtering, then were crystaillizedby following annealing process at high temperature. SiC thin films werecharacterized by XRD, FTIR, AFM, SEM, PL, XPS, microhardness tester andmultifunctional material surface performance tester. The effects of annealingatmosphere and annealing temperature on the structures and properties of SiC filmswere given. In order to improve binding force berween SiC films and differentsubstracts, AlN films were prepared on Si substracts as buffer layer, and Ti/TiN,Al₂O₃, Ni-P films were prepared on stainless steel substractes as a buffer layer too.The main contents are as follows:The first chapter outlines the SiC crystal structure, physical and chemicalproperties, application and prospection, the common preparation methods of films.In addition, the research status, main content and innovation point are introduced.The second chapter introduces the principle of RF magnetron sputtering andelectron beam evaporation, and discribles the preparation of thin films, then the testmethods of thin films are simply introduced.The third chapter discusses the annealing parameters of SiC thin filmsprepared on Si substracts. The XRD, PL, SEM and XPS are used to characteriz thestructures and properties of the films, and the relationships of annealingatmosphere, annealing temperature with the structures and properties of SiC filmsare analyzed.The forth chapter studies the mismatch problem between SiC films with Sisubstracts, AlN buffer layer is prepared on the Si substracts. SiC monolayer andAlN/SiC bilayer films are analysed by PL, AFM and multifunctional materialsurface performance tester.The fifth chapter analysis the peeling of SiC films prepared on stainless steelsubstractes likely to fall off, and Ti/TiN, Al₂O₃, Ni-P are used to improve thebinding force between SiC films and stainless steel substractes. The basicprinciples and preparation of buffer layers are simply introduced.The sixth chapter mainly compares the structures and properties of SiCmonolayer films with Ti/TiN/SiC, Al₂O₃/SiC, Ni-P/SiC multilayer films preparedon stainless steel substrates. The structures, morphologies and properties of monolayer and multilayer films are characterized by XRD, AFM, microhardness,then the structures and properties between monolayer and multilayer films arecompared to find advantages of multilayer films.Chapter seven gets conclusions and outlooks.更多还原