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掩膜版雾状缺陷改善与光刻良率提升
Haze Defect and Litho Yield Improvement
【作者】 陈尧;
【作者基本信息】 上海交通大学 , 软件工程, 2008, 硕士
【摘要】 在半导体业大尺寸、细线宽、高精度、高效率、低成本的要求下,如何有效降低掩膜版的雾状缺陷产生的频率,以提高产品良率是半导体业界重大的挑战之一,特别是在光刻波长进入到193nm世代之后,掩膜版雾状缺陷越发严重,成为必须立即改善的课题。本文从理论出发,结合半导体工业生产过程的试验数据,并加以分析,比较,从效果,效率,费用等方面考量,从而得到符合现代半导体工业解决掩膜版雾状缺陷的可行方案。从掩膜版雾状缺陷的原理研究发现,它主要是由硫酸根,氨等物质在特定环境下进行酸碱反应的综合产物。掩膜版雾状缺陷与晶圆尺寸,光刻波长,光刻工艺参数,掩膜版环境以及掩膜版自身生产制造及清洗过程都有密切的关系。晶圆尺寸扩大化,光刻波长缩小化,以及光刻图案密集化都是半导体产业的发展趋势,所以掩膜版雾状缺陷的解决方案的重点放在掩膜版的环境和掩膜版自身工艺的改善方向上。掩膜版的环境可以分为掩膜版的工作环境和存储环境。在掩膜版工作环境的改善上,从整个厂区,机台以及掩膜版检测区域的环境入手,在特定地点加装气体过滤器。工作环境改善明显,但对掩膜版雾状缺陷改善效果有限,并且总体费用较高。在掩膜版的存储环境改善方面,采用掩膜版放置盒,净化柜和存放柜立体结合的方式,对掩膜版放置盒和净化柜,存放柜进行相应的改进。在这个立体环境中持续的给掩膜版提供极其纯净的气体,减少外界环境对掩膜版的影响。从测试效果来看,掩膜版存储环境得到了很大的改善,对掩膜版雾状缺陷的提升效果明显。而且相对而言,费用比较低廉。传统的掩膜版制造和清洗工艺都包含有硫元素,在后期的使用和存储过程会逐渐的渗析出来,成为掩膜版雾状缺陷产生的重要源头之一。掩膜版制造和清洗工艺的无硫化是发展的重要方向。目前已经取得了一些进展。在掩膜版雾状缺陷的检测方面,将掩膜版检测和图形检测结合起来,不但可以提早发现掩膜版雾状缺陷,减小掩膜版雾状缺陷对产品良率产生的重大影响,同时也可以有效降低成本。
【Abstract】 Higher precision, more efficiency, larger the wafer size, and more narrow the line width are the most critical factors that the semiconductor industry is continuing pursued. To reduce haze defect becomes one of the most challenge to improve the production yield because the haze defect is more and more serious while the lithography technology coming into 193nm generation. This research, combining the haze defect theory with the analysis of those real data from fab based on the concern of cost, efficiency and effectiveness, provides semiconductor industry a practicable solution to reduce haze defect.From the principle haze defect, it is the integrated product of acid-base reaction which mainly from sulfate, ammonia and other substances in a particular environment. The haze defect has a closely relative with the wafer size, lithography wavelength, lithography process parameters, the mask environment and mask own manufacturing and cleaning processes. It is the semiconductor development for the wafer size magnification, lithography wavelength shorten, mask pattern denseness. And the haze defect solution will be focused on the improvement both for the mask environment and the mask own process.The mask environment could be divided into mask the work environment and storage environments. The gas filter will be installed on the specific location for the entire plant, tool and mask room etc. It is significantly improvement for the mask working environment, but to the limit effect for the haze defect improvement. And overall cost is high. It is the combination of the mask placed box, mask cabinets and mask stocker for the mask storage environment improvement. After modification for the mask placed box, mask cabinets and mask stock, this method will provide and keep the continuous extra cleaning gas to the mask. It will reduce the impact for the external environment. The mask storage environment has reached a large improvement from the test data. It is a large improvement for the haze defect. The cost is lower than previous solution.The traditional mask manufacturing and cleaning process both includes sulfur. It will gradually out of dialysis during the latter part of the use and storage. It is an one of the major source of the haze defect. The nonsulphide mask manufacturing and cleaning process is the important direction of development. It has made some improvement at present. But the relative process still not be perfect.It is a good method to combined with the mask inspection and wafer pattern confirmation. It might not only found early haze defect to reduce the yield impact, but also could effectively reduce costs.
【Key words】 haze defect; mask; storage environment; lifetime; nonsulphide cleaning; pattern inspection;