ULSI光刻图形线宽调制的优化研究

【作者】 胡鹏飞；

【导师】 郑国祥； 董柏民；

【作者基本信息】 复旦大学 ， 集成电路工程， 2012， 硕士

【摘要】 在半导体制造过程中,光刻技术是集成电路的关键技术之一,在整个产品制造中是重要的经济影响因子,光刻成本占据了整个制造成本的30～35%。光刻技术也是决定了集成电路按照摩尔定律发展的一个重要原因。随着光刻工艺图形线宽越来越小,光刻图形线宽值及其均匀性问题对工业生产影响越来越大。而且,这一问题一直没能彻底解决。匀胶显影中的各个工艺环节是决定光刻图形线宽调制的关键因素之一。为了达到理想的线宽,需要匀胶显影过程中各个工艺环节的良好控制。本文通过一系列研究,得出了一系列影响光刻图形线宽调制的因素并对其进行分类,其中软烤时间、曝光后烘烤时间对光刻线宽均值及均匀性影响极大,光刻胶喷吐量对光刻线宽均值及均匀性影响较小。并且,针对影响光刻图形线宽调制的重要因素,成功改进了DUV机台的自动系统对匀胶显影工艺中烘烤时间控制,减少了不必要的自动系统控制参数；通过减少对光刻图形线宽调制影响较小的光阻喷吐量,大大减少了生产运营成本。更多还原

【Abstract】 In the semiconductor manufacturing process, lithography technology is one of the most critical technologies of integrated circuits, which is an important economical impact factors throughout the product manufacturing. The cost of lithography occupies30to35percentage of that of overall the manufacturing loop. Lithography technology is also the important reason why integrated circuits developed following the Moore raw. While the line width of the lithography process is becoming smaller and smaller, the line width and uniformity of lithography has more and more impact on industrial manufacturing. And this problem has not been solved.Any step in coating-developing loop is one of the important factors in decision of the line width control. For the ideal line width, we need do more controlling for any procsess steps in the coating and developing.By many series of researches, many kinds of factors which impact the line width are gained and classified. In these factors,2factors that is soft-baking time and PEB time are the highest, and the volume of photo resist dummy is the lower. Then, point to the important factor, it is successful to improve the baking process time for DUV tools in IMES system and to reduce the unnecessary control parameter in the IMES system; by reducing the photo resist dummy volume, the manufacturing cost is trend down much.更多还原