【作者】 徐晶；

【导师】 薄报学；

【作者基本信息】 长春理工大学 ， 微电子学与固体电子学， 2012， 硕士

【摘要】 ZnO作为一种宽禁带的化合物半导体材料而言,因为具有稳定的化学性能和电学、光学性质,其禁带宽度在室温下为3.37eV,没有毒害的副作用,而且成本便宜等特征,所以备受人们关注,又十分广泛的用途。本论文设计采用ZnO为大功率半导体激光器的前腔面增透膜。本论文采用磁控溅射法制备ZnO薄膜,靶材是纯Zn靶,溅射工作气体是高纯度的O2和Ar。在以Si和石英为衬底制备ZnO薄膜,并研究不同溅射工艺下薄膜的特性。用优化后参数在808nm激光器的前腔面镀膜,并测试其功率和阈值电流等参数,结果表明镀膜后反射率降低,输出功率、阈值电流、斜率效率和电光转换效率有明显的提高,符合实验的设计初衷。更多还原

【Abstract】 ZnO takes much attention as a wide band gap compound semiconductor material which has stable chemical, electrical properties and optical properties. It is used in very wide range because the characteristic band gap3.37eV at room temperature, with no toxic side effects, and low cost. This paper designed to use ZnO as the front cavity surface AR coating of high-power semiconductor lasers.In this paper,the ZnO films were prepared by magnetron sputtering. The target is a pure Zn target, and sputtering working gas is a mintune of high purity O2and Ar. Then used Silicon and quartz were used as substrates to prepare the ZnO thin film, and study the characteristics of thin film in different sputtering process. Coating on the front cavity surface of808nm laser with the optimized parameters, then testing their power and threshold current and other parameters, we get the result that its reflectivity reduce, and its output power, threshold current, slope efficiency and electro-optical conversion efficiency has significantly improved after the coating. The experiment is designed to meet the result.更多还原