【作者】 王巍；

【导师】 王新；

【作者基本信息】 长春理工大学 ， 微电子学与固体电子学， 2011， 硕士

【摘要】 氧化镍是具有典型的3d电子结构的氧化物半导体,是一种p型半导体材料,禁带宽度是在3.6～4.0eV之间。因为氧化镍薄膜具有优良的光电特性,而被广泛应用于紫外探测器,电致变色器件,电池电极及电化学电容器等领域。氧化镍薄膜的制备方法有：磁控溅射、化学气相沉积、分子束外延、脉冲激光沉积等。这些方法设备昂贵,技术较复杂,不易于大面积的薄膜制备。目前发展的溶胶-凝胶法则成本低廉、工艺简单、成分均匀,适用于多元掺杂薄膜的制备。本论文采用溶胶-凝胶法,用不同浓度的溶液,在不同热处理温度下制备了多组NiO薄膜。为了调节NiO薄膜的禁带宽度,使其更好的应用于紫外探测器领域,还制备了掺Mg的NiO薄膜,并采用紫外-可见(UV-VIS)分光光度计,X射线衍射仪(XRD),原子力显微镜对所得薄膜进行测试,研究了薄膜的结构,光学,表面形貌等特性。更多还原

【Abstract】 NiO is a p-type semiconductor material with typical 3d electron structure oxide. Its band gap is between 3.6-4.0 eV. Because NiO thin films have excellent optical and electrical properties, it is widely used in many fields, such as UV-detector, electrochromic display,electrodes and electrochemical capacitors.There are several methods to prepare nickel oxide films, which include magnetron sputtering, chemical vapor deposition, molecular beam epitaxy, pulsed laser deposition, etc. For above methods, the equipment is expensive, technology is complex and it is not easy to prepare the large area of thin films. At present, the sol-gel method that is low cost, simple process and components uniform, so it is suitable for the preparation of multi-element doped film.In this thesis, NiO thin films were deposited by the sol-gel method at different concentrations of solution and temperature. In order to adjust the band gap of NiO thin films and make the thin film can be applied to the UV-detector fields extensively, the Mg-doped NiO thin films were prepared. The structure, optical characters, and surface morphology of the thin films were investigated by X-ray diffraction(XRD), UV-VIS spectrophotometer and atomic force microscopy(AFM).更多还原