【作者】 刘健；

【导师】 王家礼； 吴洪江；

【作者基本信息】 西安电子科技大学 ， 电子与通信工程， 2007， 硕士

【摘要】 GaAs微波功率单片电路具有高频率、宽频带、低损耗、大功率、小体积、抗辐照能力强等特点,使得GaAs MMIC在军事电子上应用广泛。本论文研究了MESFET、HEMT、PHEMT的结构、工作原理和模型,分析了功率单片电路的材料结构,器件设计、建模技术、电路设计、测试技术等。在3英寸GaAs工艺线上,采用0.25 u m PHEMT工艺,制做出X波段大功率MMIC。达到的主要技术指标为：频率8-9GHz；饱和输出功率≥39dBm功率增益≥21dB；功率增益平坦度≤±0.3dB；输入驻波比≤1.6：1；附加效率≥33%。该单片电路达到了预期的研究目标,在军用与民用领域均具有良好的应用前景。更多还原

【Abstract】 This paper presents an X-band GaAs power microwave monolithic integrated circuit (MMIC). Because of the good characteristics of MMIC,such as high-frequency, wideband, low loss, high power, small volume,and the strong ability of radiation-harding and so on, GaAs MMIC is widely used in the military electronic area. In this paper, the device structure, operation principles, and models of GaAs MESFET, HEMT, and PHEMT are studied, and material structure, component design, modelling technology, CAD, process technology, reliability design, test method are studied too. The chip is fabricated on 3" GaAs process, and 0.25um PHEMT technique. The performance of the circuit has achieved the study goal. The chip’s specifications are as follows:8-9GHz, P0≥39dBm, Gp≥21dB,△Gp≤±0.3dB, VSWRin≤1.6:1,ηadd≥33%. The chip has good application prospect in both military and commercial arean.更多还原