【作者】 魏晋军；

【导师】 马书懿；

【作者基本信息】 西北师范大学 ， 凝聚态物理， 2008， 硕士

【摘要】 随着信息技术的飞速发展,信息采集、贮存、处理的容量和速度要求日益提高,电子时代的重要物质基础半导体器件正在接近或已经达到其物理极限,必须寻求新的理论和实践的突破;从微电子集成到光电子集成将使信息技术产生一个巨大的飞跃,光子时代正在日益临近。由于硅具有一系列独特的性质,而且硅集成工艺非常完善,在微电子集成中,硅的基础地位无可替代,所以实现硅发光是完成这种飞跃的关键所在,硅基发光材料已成为国内外学者研究的热点,它的光致发光机制正在被广泛深入地研究,我们研究小组在这方面进行了大量的工作,已经取得了一定的研究成果。采用磁控共溅射法在P型硅衬底上沉积了硅含量不同的纳米硅镶嵌氧化硅薄膜,溅射时采用硅/二氧化硅复合靶,通过改变硅与二氧化硅靶的面积比例来改变薄膜中的硅含量,所用复合靶上硅与总靶的面积比分别为5%,10%,20%和30%,4种样品都在氮气氛中经300℃退火30min,使用美国贝克曼公司生产的紫外可见光分光光度计(DU-7B型)对样品进行了光吸收测量,用高分辨电子透射显微镜测定了硅含量不同的系列样品中纳米硅晶粒的尺寸,确定了其光学带隙和光吸收边蓝移量,运用量子限域效应模型和介电限域效应模型进行了理论计算,证实随着薄膜中纳米硅晶粒尺寸的不断缩小,其光吸收边蓝移不断增大,两种理论模型计算值都与实验值存在一定程度的偏差,这与纳米硅晶粒尺寸的表征方法及理论模型的准确性有密切的关系。保持薄膜中硅含量不变,采用不同的退火温度进行后处理,溅射时硅/二氧化硅复合靶的面积比为10%。各样品分别在氮气氛中经过300℃, 500℃, 700℃,和900℃退火处理30min,测量了其光吸收谱,测定了系列样品的光致发光谱,发现其发光峰位几乎不发生移动,发光强度同纳米硅晶粒的尺寸间不存在单调增减的对应关系。使用不同的激发波长对同一样品进行激发测定了光致发光谱,发现样品的发光峰位也未发生明显移动,但发光强度的变化趋势差异较大,证明样品中发光中心的分布并不均匀,具有一定的层次性。采用磁控溅射法制备了SiC/ZnO/Si镶嵌结构复合薄膜,对样品在不同的温度下进行了退火后处理,测定了样品的光致发光谱,结果显示,复合薄膜的光致发光强度较单体薄膜有一定的增强,主要原因是发光复合中心的多元化和分布浓度的变化,随着退火温度的不同,各峰位的变化趋势有所不同。更多还原

【Abstract】 Along with the development of information technology,the requirement on speed and capacity of collection,stockpile,dispose for information become higher and higher, parts of an apparatus of semiconductor are approaching its margin.we need found a new theoretics and practice breakthrough.Micro-electronecs integration to photoelectron integration is huge Advancement,the age of photoclectron is coming.because the silicon have many unique characters,and because the technics of silicon integation is very consummate,in the semiconductor-integration,its status is unique. So silicon luminescence is where the shoe pinches,the material of silicon radicel luminescence has become the hotspot of all the scholar.Its mechanism of photoluminescence are under researching, our group have done plentiful job on it and have acquired many researchful production.Prepared the SiO2 films contained nano silicon particles by using magnet sputtering technique,using complex target,changed the content of silicon in the film by changed the proportion of silicon and silicon dioxide.the proportion of silicon and total target are 5%, 10%, 20%and 30%.all the patterns are annealed in the nitrogen 30 mins at 300℃.measured the light absorption by spectrophotometer(DU-7B).Retain the silicon content,annealed the films by diverse temperature.the proportion of silicon and silicon dioxide is 10%. The patterns are annealed in the nitrogen at 300, 500, 700, 900℃,and measured its light absorption.The diameter of nano silicon particles are measured by the aid of TEM, measured the optical gap and the blue shift of the absorption edge,Made academic calculation by Quantum confine domino offect and electricity confine domino offect approved that more the diameter of silicon redu- ceed, more the absorption edges blue shift,the calculated result are differ from the experimental result,this related with the measure of silicon diameter and the veracity of the theoretical model.Measured the photoluminescence of patterns annealed at different temperature. finded that the apex location hardly moved.and the intension don’t decided by the silicon diameter.Blazed the same pattern by different wavelength,determined its photoluminescence,found that the apex location also hardly moved,but the the metabolic current of intension are diversity,it proved that the illuminant centers are asymmetry, and hve administrative levels.Nanocrystalline SiC/ZnO/Si films was were prepared by radio frequency (RF) magnetron co-sputtering and adopting subsequent high temperature annealing. Analyzed the photoluminescence (PL) of the film, observed that the intension was buildup than nanocase, the main reason are the increasing of luminescent centers and distributing consistency. The change current are differ with annealing temperature.更多还原