【作者】 张惠；

【导师】 沈鸿烈； 冯晓梅；

【作者基本信息】 南京航空航天大学 ， 材料物理与化学， 2010， 硕士

【摘要】 采用射频磁控溅射法在PEN和PET衬底上室温制备了柔性AZO薄膜。结果表明,实验制备的柔性AZO薄膜为六角纤锌矿结构,且具有良好的c轴择优取向。溅射功率、工作气压、衬底种类、Ar气流量等生长条件对薄膜的结构、光电性能有一定影响。工作气压增大恶化薄膜结晶性能,使薄膜电阻率增大,禁带宽度由于Burstein-Moss效应而变窄。在溅射功率为150W,Ar气流量为20sccm和工作气压为0.05Pa的优化条件下,PEN衬底上沉积的AZO薄膜品质因数最高,达到1.78×10⁴Ω-1·cm^-1,此时薄膜电阻率、载流子浓度和霍尔迁移率分别为1.11×10^-3Ω·cm、4.14×10²⁰cm^-3和13.60 cm²·V^-1·s^-1,薄膜的可见光绝对透射率达到95.70%。在优化生长的AZO薄膜基础上,利用射频磁控溅射法在PET和玻璃衬底上室温制备了AZO/Ag/AZO多层膜,并研究了Ag层厚度、Ag层溅射功率以及衬底种类对多层膜结构和光电性能的影响。结果表明,AZO/Ag/AZO多层膜呈现ZnO（002）和Ag（111）择优取向,且Ag（111）衍射峰强度随Ag层厚度的增加而增大。薄膜导电性随Ag层厚度增加而增强,但在Ag层生长初期,霍尔迁移率由于受界面散射影响而减小。在Ag层溅射功率为200W,Ag层厚度为24nm的优化条件下,薄膜品质因数最高,此时PET上沉积的多层膜电阻率、透射率、品质因数分别达到3.97×10^-5Ω·cm、78.67%和6.59×10⁴Ω^-1·cm^-1。更多还原

【Abstract】 Flexible AZO thin films were deposited on PEN and PET substrates by r.f. magnetron sputtering at room temperature. Results show that the AZO thin films have polycrystalline hexagonal wurtzite structure with highly c-axis preferred orientation. Growth conditions, such as sputtering power, working pressure, substrate type and Ar gas flow rate, affect the film’s structural and photoelectric properties. For instance, increase of working pressure worsens the crystal property, increases the film resistivity, and narrows the optical energy gap due to the Burstein-Moss effect. Under the optimized condition, when the sputtering power is 150W, Ar gas flow rate is maintained at 20sccm, and working pressure is kepted at 0.05Pa, AZO thin films deposited on PEN substrate exhibit the highest figue of merit, reaching 1.78×10⁴Ω-1·cm^-1. The optimized film resistivity, carrier concentration and Hall mobility are 1.11×10^-3Ω·cm, 4.14×10²⁰cm^-3 and 13.60 cm²·V^-1·s^-1 respectively, with an absolute visible transmittance of 95.70%.AZO/Ag/AZO multilayers were prepared on PET and glass substrates at room temperature via r.f. magnetron sputtering method, based on the optimized AZO thin films. The influences of Ag layer thickness and sputtering power on the multilayer structural and photoelectric properties are investigated. Results indicate that AZO/Ag/AZO multilayer exhibite ZnO（002） and Ag（111） preffered orientation, while the intensity of Ag（111） increases with increasing Ag layer thickness. The multilayer conductivity is enhanced by increased Ag layer thickness, but the Hall mobility reduces at the intial growth stage of Ag layer, because of the interface scattering. When the Ag layer sputtering power is kept at 200W and Ag layer thickness is 24nm, the optimized figue of merit is obtained. The optimized resistivity, transmittance, and figue of merit for AZO/Ag/AZO multilayer on PET are 3.97×10^-5Ω·cm、78.67% and 6.59×10⁴Ω^-1·cm^-1 respectively.更多还原