【作者】 张丽；

【导师】 何建军；

【作者基本信息】 浙江大学 ， 光通信技术， 2011， 硕士

【摘要】 上世纪70年代,磷化铟材料外延技术的进步使得长寿命,高可靠性的半导体有源器件走向成熟,为光通信的飞跃式发展奠定了基础。磷化铟及其四元衍生物的能带结构可以随组分变化,为各种高集成度光子器件的实现提供了极大的灵活性,因此磷化铟集成光子器件的一直是国际上研究的热点之一蚀刻衍射光栅(EDG, etched diffraction grating)尺寸小,结构紧凑,在高射率材料的密集波分复用器件中有广泛应用。而磷化铟基的EDG能够和探测器、激光器、调制器等有源元件单片集成,实现集成度更高,功能更强大的集成光子器件。本课题的研究是基于磷化铟及其四元衍生物这一平台,采用蚀刻衍射光栅(EDG)结构,针对光纤到户双向／三向信号收发器和波长可调谐彻换激光器两个器件开展一系列的研究,开发出低成本、高可靠性的单片集成的信号收发器件。同时在现有实验平台下,探索磷化铟基EDG器件的制作工艺,为今后发展更多相关功能的集成光电子器件奠定坚实的基础。更多还原

【Abstract】 Since 1970s, the progress of epitaxial technology for Indium Phosphide (InP) based material system has enabled the long-life, high reliability semiconductor active devices to mature, which has laid the foundation for a leap-forward development of optical communication. The Indium Phosphide has a great deal of flexibility for the realization of a variety of photonic devices since its energy band structure and quaternary compounds can be tailored by varying its composition. Therefore, InP based integrated photonic devices has been widely investigated, especially for telecom applications.Etched Diffraction Grating (EDG) has received great interest g as a DWDM (dense wavelength division multiplexing) device because of its small size and compact structure. Based on InP, it can be monolithically integrated with many active devices such as semiconductor laser, detector, modulator etc, which will make the chips more compact and multi-functional.The subject of this thesis is based on InP and its quaternary compounds, using EDG to design low-cost, high reliability monolithically integrated photonic devices for tunable lasers and diplexers/triplexers used in fiber-to-the-home (FTTH) applications. The fabrication processes of EDG based on InP are developed in order to lay the foundation for the future development of other related photonic devices.更多还原