节点文献
薄膜导线中损伤缺陷的形貌演化及愈合机理的相场法研究
The Morphological Evolution and Concrescence Mechanism for a Damnification in Thin-film Interconnect of Integrated Circuit Analyzed by Phase -field Method
【作者】 孔涛;
【导师】 王熙;
【作者基本信息】 上海交通大学 , 固体力学, 2010, 硕士
【摘要】 集成电路中互连导线存在一种典型的失效模式:即初始损伤缺陷(显微孔洞)萌生、扩张、失稳形成狭长裂纹,从而切断导线使其发生开路失效。本文首先基于相场法应用于损伤缺陷形貌演化的控制方程,采用FTCS(forward for time; center for space)差分格式求解控制方程,并使用窄带界面法优化计算方法。在算例计算中,数值模拟了初始损伤缺陷构型为圆形孔洞在电场作用下的形貌演化过程,将得到的孔洞漂移速度与现有文献的理论解和尖锐界面的解进行比较,得到较好的吻合,从而证明了本文所给出的相场模型数值求解方法的可靠性和正确性。另外,本文分别计算了初始构型为圆形孔洞在表面能、电场和各种应力载荷作用下的形貌演化过程,研究了各向异性扩散特征对构型形貌演化规律的影响,描述了初始构型为裂隙形状在各种物理条件下的形貌演化过程和规律。最后,本文综合各种不同的外场物理条件对孔洞形貌演化的影响规律,预测不同的孔洞构型形貌演化发展的趋势,探讨孔洞愈合机理的可行性。为集成电路中互连导线的可靠性设计提供了有意义的理论依据和实际的工程应用参考价值。
【Abstract】 A typical failure mode of the thin-film interconnect in integrated circuit is that voids nucleate, grow and change their shape to form crack-like slits oriented perpendicular to the line, which cause an open circuit.Phase-field method can be used to describe the complicated morphologies of voids growth without explicitly tracking the complex phase boundaries.It is expected as a powerful tool to describe complex phase transitions in non-equilibrium state.In this thesis, the governing equations which simulate morphological evolution of a void in interconnect are firstly developed based on sharp interface method and phase-field method,and then we get dimensionless parameters equation. The narrow interface method is put forward to optimize the numerical computation of the phase-field model.In the example calculation, the numerical simulation of the initial damage defect configuration was circular void in the electric field. The void drift velocity compared with the existing literature and the theoretical solution get a good match, which proved that this phase-field model given by numerical solution have reliability and validity.We use the established model to simulate the void morphological evolution under the surface energy, electric field and stress field. Then we make the analysis of the accuracy and applicability of the results of numerical simulation .The impact of the diffusion anisotropy is to be considered. From this simulation we study the major role of diffusion anisotropy on the configuration of the evolution. Also we change the initial configuration for numerical analysis of micro-crack shape to study the evolution of the crack appears in the form of various types of morphology evolution.Finally,considering the various field conditions on the void morphology evolution of the physical influence in different void configurations, we predicte void shape evolution trend to explore the feasibility of the mechanism of crack healing. So interconnect wires could design to provide a meaningful reliability of the theoretical basis and practical engineering application reference value.
【Key words】 thin film interconnect; phase-field method; morphological evolution; anisotropic diffusion characteristic; electric field; stress field;