【作者】 王彬；

【导师】 胡礼中；

【作者基本信息】 大连理工大学 ， 微电子学与固体电子学， 2010， 硕士

【摘要】 氧化锌(ZnO)是一种直接带隙宽禁带Ⅱ-Ⅵ族化合物半导体材料,其室温下禁带宽度约为3.37 eV,激子束缚能高达60 meV,远高于室温下的热离化能(26 meV),ZnO中的激子能够在室温下稳定存在,并且可以产生很强的光致激子紫外发射,非常适于制备室温或更高温度下低阈值、高效率受激发射器件。由于ZnO在结构、电学和光学性质等方面有很多优点,并且ZnO薄膜的制作方法很多,如磁控溅射(Magnetron Sputtering)[1]、脉冲激光沉积(PLD)、金属有机物化学气相沉积(MOCVD)、喷雾热解(SP)、分子束外延(MBE)等,使其在光探测器、表面声波器件、透明电极、太阳能电池等光电子器件领域有很大的发展前景。而制备高质量的ZnO薄膜对于实现以上的这些应用具有重要意义。本文采用磁控溅射法生长本征ZnO薄膜,并且研究了衬底和退火温度对ZnO薄膜的结构、电学和光学性质的影响。具体研究内容如下：利用磁控溅射法在A1203(001)衬底上沉积了ZnO薄膜,生长温度分别为500℃、550℃、600℃和650℃,溅射后对薄膜进行了800℃和1000℃退火处理。利用X射线衍射(XRD)对薄膜的结构进行测试,结果表明蓝宝石衬底上制备的ZnO薄膜均具有明显的c轴择优取向,ZnO薄膜的结晶质量受生长温度和退火温度的影响,退火处理能够改善薄膜的结晶性能,适当的生长温度(550℃)和退火温渡(800℃)下ZnO薄膜呈现良好的结晶质量。利用霍尔测试仪对薄膜的电学性质进行了测量,结果表明800℃退火处理后薄膜的载流子浓度最小,薄膜中本征缺陷最少。利用透射谱仪对薄膜的光学性质进行了测量,结果表明退火处理能够改善薄膜的透光性。更多还原

【Abstract】 ZnO has attracted great interest for its wide band gap (3.37eV) and relatively large exciton binding energy (60meV) at room temperature (RT). It has been regarded as one of the most promising candidates for the next generation of ultraviolet (UV) light-emitting diodes (LED) and lasing devices(LD) operating at high temperatures and in harsh environments. Because of the advantages in structure, electrical and optical propertie as wel as various methods for synthesizing ZnO thin films, such as megnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition, spray pyrolysis, molecular beam epitaxy.etc. methods, ZnO thin films have widely applications in photodetectors, surficial acoustic devices, transparent electrodes, solar cells and so on.In this paper, ZnO thin films were prepared by megnetron sputtering method, and the influences on structure, electrical and optical properties of as-prepared ZnO thin films has been well studied.ZnO thin films were deposited on Al2O3 (001) substrates by megnetron sputtering method, and the growth temperatures were 500℃,550℃,600℃and 650℃, respectively. Annealing treatments for as-deposited samples were performed with different temperatures. We investigated the structure, electrical and optical properties of the ZnO thin films using X-ray diffraction (XRD), Hall and transmittance spectrum measurements. The results indicated that crystalline quality, electrical and optical properties could be highly improved by proper growth temperature and annealing temperature.更多还原