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X波段宽带高功率系列功放的理论研究与设计

Theory Research and Design of X-band Wide Band High Power Series Amplifiers

【作者】 张勇

【导师】 宋耀良; 商坚钢;

【作者基本信息】 南京理工大学 , 电子与通信工程, 2008, 硕士

【摘要】 固态功率放大器与电子管放大器相比,具有可靠性高、长寿命、工作电压低、故障软化等优点,近年来,低频段的固态功率放大器已得到广泛的应用,但在高频段尤其是X波段,受到单个功率管输出功率偏低的限制,其工程应用普及率很低,因此研究高功率X波段固态放大器具有非常重要的意义。目前,X波段固态功率放大器采用的功率管主要是GaAs FET功率管,大功率放大器的设计技术主要是GaAs FET放大器设计技术和功率合成设计技术,本文针对GaAs FET功率管的特点,首先介绍了单级功率放大器的设计方法和理论,阐述了输入输出匹配网络、偏置电路、隔直电路的设计方法和要求,介绍了常用的电源调制电路;其次分析比较了常用功率合成技术,采用微波CAD软件对各微带电路进行了仿真优化设计,给出了仿真数据和实测结果。在此基础上,利用现有的低频段成熟的技术来进行不同功率量级的功放组件研制,形成该频段内的功放系列化、通用化、模块化设计。设计成型的发射模块应用广泛,可以通过合成而成为大功率集中式发射机,也可以直接作为发射单元应用于相控阵雷达。最后通过测试,设计的系列功率放大器在9.0GHz~10 Ghz的频带范围内输出功率满足设计要求。

【Abstract】 Compared with the vacuum tube amplifier, the solid state power amplifier have the advantages of high reliability, low operating voltage, graceful failure, etc. In recent years the low-band solid state PA has already been widely used, however, its applications is limited by the low output power at X band. So research of high power solid state amplifier at X band is very meaningful.Recently the transistor used at X band solid state PA is mainly GaAs FET. The key design technology of high power amplifier are the design of GaAs FET amplifier and power combiner. Based on the features of GaAs FET, at first this thesis introduces the design methods and theories of single-stage PA, expounds the design methods and demands, and introduces a common used supply power modulating circuits. Secondly common power combining techniques are analyzed and compared. After that the high power solid state amplifier is designed. Microwave CAD software is used to simulate and optimize all microwave circuits, simulating data and test results are presented. The results prove that power amplifiers can meet the demand of specifications, which can provide references for future engineering applications.

  • 【分类号】TN722.75
  • 【被引频次】4
  • 【下载频次】453
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