【作者】 李兵；

【导师】 史成武；

【作者基本信息】 合肥工业大学 ， 应用化学， 2009， 硕士

【摘要】 本文采用水热法制备了SnS₂及其复合物和SnS及其复合物纳米材料,并用浸涂法制备相应的薄膜和薄膜太阳电池。分别用XRD和TEM分析了纳米材料的晶型和颗粒形貌;测量了薄膜的UV-Vis、UV-Vis-NIR吸收性能,并由此研究了薄膜的光学带隙;同时还测量了薄膜的电化学阻抗谱和电池的光伏性能。实验结果表明,Sn（Ⅱ）掺杂的SnS₂有Sn₂S₃生成,Cu（Ⅱ）掺杂的SnS₂则发生了晶格取代;Sn（Ⅳ）掺杂SnS使SnS产生晶格缺陷,Cu（Ⅱ）掺杂的SnS则有Cu₄SnS₄生成;SnS₂及其复合物薄膜在波长为500nm左右有一个明显的吸收开端,而SnS及其复合物薄膜在波长为1000nm左右有一个明显的吸收开端;且SnS₂间接带隙和SnS直接带隙大小与掺杂的离子种类和掺杂量有关;不同薄膜的界面传输电阻和电子在薄膜内的传输时间明显不同;FTO/SnS₂:Cu（Ⅱ）/SnS/Sn结构的薄膜太阳电池的光伏性能测试结果为:短路电流密度37.5μA/cm²,开路电压130mV,填充因子0.35,光电转换效率0.05%。更多还原

【Abstract】 In this thesis,SnS₂,SnS and their complexes nanomaterials were prepared by hydrothermal procedure.The related thin films and solar cells of SnS₂,SnS and their complexes were prepared by dip-coating procedure.The nanomaterials were characterized by XRD and TEM.The UV-Vis,UV-Vis-NIR spectra of thin films were recorded,and the optical band gap of thin films were calculated.The electrochemical impedance spectroscopy of the thin films and the photovoltaic performances of the solar cells were measured.The results showed that Sn₂S₃,and lattice substitute were found when Sn（Ⅱ） and Cu（Ⅱ） were doped to SnS₂,while lattice defects and Cu₄SnS₄ were found when Sn（Ⅳ） and Cu（Ⅱ） were doped to SnS.The absorption threshold of SnS₂ and its complexes thin films were around 500 nm,while SnS and its complexes thin films were around 1000 nm.The indirect band gap of SnS₂ and direct band gap of SnS were related to the doped ions and the amounts.There were different interface transfer resistance and transmission time of electrons of different thin films. FTO/SnS₂:Cu（Ⅱ）/SnS/Sn thin film solar cell gave short circuit photocurrent density of 37.5μA/cm²,open circuit voltage of 130 mV,fill factor of 0.35,and the photoelectric conversion efficiency of 0.05%.更多还原