【作者】 石二磊；

【导师】 崔岩；

【作者基本信息】 大连理工大学 ， 机械电子工程， 2008， 硕士

【摘要】 随着MEMS及纳米科技的进步,悬臂梁探针在扫描探针显微镜、隧道传感器、微纳米加工、高密度数据存储中的应用越来越多,微纳米针尖的曲率半径及悬臂梁的性能决定着传感器的灵敏度。本文以硅微悬臂梁探针的制备为研究对象,采用单晶硅材料,结合湿法腐蚀和干法刻蚀的方法制备硅微悬臂梁探针。首先采用湿法各向异性腐蚀及干法刻蚀的方法制备纳米硅尖,研究了两种方法的特点,制作出不同形状的硅尖。采用干法刻蚀的方法制备出纵横比约为1.1的四面体硅尖。采用KOH溶液各向异性腐蚀单晶硅的方法制备硅尖,研究了腐蚀溶液的浓度、添加剂异丙醇(IPA)、掩模的偏转方向对硅尖形状的影响以及硅尖的锐化方法,制备出纵横比0.52～2.1的硅尖。提出了硅尖晶面的判别方法,讨论了实验中出现的两种硅尖晶面类型{411}和{331}晶面族。通过分析腐蚀溶液的浓度和添加剂对{411}、{331)晶面族腐蚀速度的影响,得到了制备纳米硅尖的工艺参数:在78℃、浓度40%的KOH溶液中腐蚀硅尖,硅尖侧壁由与(100)面夹角为76.37°的{411}晶面组成,经980℃氧化削尖,可以制备出纵横比大于2的纳米硅尖阵列。设计三种硅微悬臂梁探针的制备工艺方案,选取其中一种方案制备硅悬臂梁探针,并优化掩膜版图及工艺流程。采用湿法各向异性腐蚀单晶硅的方法制备了长宽450μm×50μm、硅尖纵横比2、高10μm、尖端曲率半径小于50nm的硅微悬臂梁探针;采用干法刻蚀的方法制备了长宽230μm×40μm、硅尖纵横比1.1、高14μm的硅微悬臂梁探针。采用两种方法均实现了硅尖和悬臂梁工艺的兼容,达到了预期目标,为硅微悬臂探针在传感器中的应用打下了良好的基础。更多还原

【Abstract】 With MEMS and nanotechnology developing, the cantilever probe was used more and more in SPM, tunnel sensors, micro-nano-processing and high-density data storage. The curvature radius of the micro-nano-tip and the performance of the cantilever determine the sensitivity of the sensors. The Fabrication of silicon micro cantilever probe is regarded as the research object in this thesis. Using single crystal silicon and combining with wet etching and dry etching techniques, the fabrication procedures of silicon micro cantilever probe are studied.In order to fabricate high aspect ratio nano-silicon tips, wet anisotropic etching and dry etching techniques are used to produce silicon tip respectively. The characteristics of the two methods are studied, and different-shaped silicon tips are produced. The tetrahedral silicon tips of aspect ratio about 1.1 are made by dry etching method. Different aspect ratio tips from 0.52～2.1 are formed using KOH solution with anisotropic wet etching method. The effects on silicon tip shape by the solution concentration, additives (IPA), and mask direction are studied. And based on the intersection model of crystal planes, this paper puts forward the identification method for crystal planes and discusses two crystal planes{411} and {331} which appear in the experiment. Through analyzing the effect on the rapid etched crystal planes {331} and {411} by solution concentration and additive and discussing the effect on tip shape by the factor of mask direction, the process parameters to get high aspect ratio nano-silicon-tips are achieved. Nano-silicon-tips are formed by anisotropic etching in 40% KOH etchant at 78℃and 3 hours dry oxidation sharpening at 980℃, as the square masks aligning to <110> direction. The high aspect ratio of the tips is greater than 2, and the profiles of silicon tips are constituted by {411} crystal planes that intersect (100) crystal planes at 76.37°.Three fabrication processes of silicon micro cantilever probe are designed, and the best processe is chose to take an experiment. The structure and experimental mask layout of the silicon cantilever probe are designed, and the process and chromic mask layout are optimized. By using wet anisotropic etching technique the size of 450μm×50μm of silicon micro cantilever probes are fabricated. The curvature radius of apex is less than 50nm, the height of the silicon tips is about 10μm, and the aspect ratio of is about 2. By using dry etching method the size of 230μm×40μm of the silicon micro cantilever probes are fabricated. The height of the silicon tips is about 14μm, the aspect ratio of is about 1.1. The integration of silicon tip and cantilever is realized by the two techniques. This work lays a good foundation for the micro cantilever probe applying in the sensing fields.更多还原