【作者】 张姣阳；

【导师】 应建华；

【作者基本信息】 华中科技大学 ， 微电子学与固体电子学， 2007， 硕士

【摘要】 单片开关电源(即AC/DC芯片)集成电路具有高集成度、高性价比、简单外围电路、优越性能指标等优点,能构成高效率无工频变压器的隔离式开关电源。由于在电源市场占有的份额不断增长,使得开关电源芯片正朝着短、小、轻、薄的方向发展。本论文基于Trench DMOS工艺,设计了一种AC/DC开关电源管理芯片。该芯片的工作方式为PWM即脉冲宽度调制方式;电路正常工作温度范围是-40℃~135℃;工作的开关频率为100KHz;占空比调节范围是2.7%～67%。其显著特点是宽范围电输入85～265VAC时,输出电压为5V,且纹波小于5%,芯片效率可达90%。文中首先介绍了TOP-Switch系列的特点以及PWM调制方式的原理和优点,然后根据功能需要和设计要求,对AC/DC开关电源管理芯片的整体结构进行设计,同时详细描述各模块的工作原理,并完成了具体的设计和仿真,达到预先设定的指标。除此之外,还对整体电路的工作过程即上电工作过程、正常工作过程、过流保护工作过程以及自动重启工作过程进行了分析与仿真,其结果表明,该电路满足设计要求,完成了该芯片的前端设计。其次,对该AC/DC芯片的工艺做了分析,绘制了版图,完成了后端设计。特别针对功率开关管Trench DMOS的结构,对该工艺进行了深入的剖析。最后,详细的给出该AC/DC开关电源芯片外围电路的参数设计步骤以及方法,并在Cadence环境下进行模拟仿真。更多还原

【Abstract】 Single-chip switch power supply (AC/DC power IC) has many virtues such as high integration level, most cost effective, lowest component count switcher solution and high performance. Its being used can form high efficiency insulated switch power supply without using utility power transformer. The increasing rates of power supply in market are forcing higher levels of integration of small, light and tiny.Based on the Trench DMOS technology, a type of AC/DC switch power supply management IC is designed. It works at high frequency with pulse width modulation (PWM) mode; the maximum operation temperature is 135℃; The working frequency is fixed at 100 KHz and the range of duty cycle is 2.7% to 67%. The noteble feature is that the ripple is less than 5% and the efficiency is up to 90% ,while the range of input voltage is 85 to 265VAC and the output voltage is 5V。In the paper, the characteristics of TOP-Switch series and the basic theory of PWM mode is given firstly. Then the total structure of the IC is present according to the function requirement. In the meantime, the working theory of all sub-circuits is described and all sub-circuits are designed and simulated carefully. Besides, the synthetic circuit is simulated about power-up working, normal working, automatic restart working and over-current working; the results of simulation meet the function requirement.Then the possible process and internal power MOSFET structures are given, especially the Trench DMOS structure. At last, the parameter designs of the external application circuit are detailed presented. And all the simulations are operated in Cadence.更多还原