【作者】 于英霞；

【导师】 李惠军；

【作者基本信息】 山东大学 ， 电路与系统， 2008， 硕士

【摘要】 随着无线通讯技术以及移动通讯系统等的飞速发展,对器件和电路性能的要求越来越高,进而推动人们去不断探索新的材料和研发新结构的器件,以满足未来半导体产业的需求。其中,SiGe HBT异质结双极晶体管以其高性能、高集成度、低成本以及与硅工艺兼容等众多优点,明显优于Si BJT器件和Ⅲ-Ⅴ化合物异质结器件,在移动通讯、卫星通讯、传感和雷达等众多领域得到了广泛应用。SiGe HBT器件已经成为当今最为活跃的研究热点之一。本文首先概括了SiGe HBT的国内外发展历史及其研究现状,提出了本课题的研究意义及应用价值;讨论了SiGe合金材料的材料特性并对SiGe HBT的基本工作原理进行了简单的介绍;对SiGe HBT的性能进行了详细的讨论与分析,包括工作电流、电流增益、特征频率、最高振荡频率、Early电压等,并给出了相应的计算公式,通过分析发射极延迟时间、发射区存贮时间、基区渡越时间、集电结空间电荷区渡越时间、集电极延迟时间等,重点讨论了其对特征频率的影响;根据理论研究及分析,着重从发射区设计、基区设计和集电区设计入手,针对SiGe HBT器件的设计规则及设计要求,以提高电流增益、频率特性及击穿电压等为目的,确定了器件设计所采用的相关工艺技术,对结构尺寸以及工艺参数等的确定给出了相应的参考指标;对实现超高频SiGe HBT可制造性设计所采用的新一代TCAD仿真工具（包括工艺级仿真工具Sentaurus Process;网格优化工具Sentaurus StructureEditor;器件物理特性模拟工具Sentaurus Device;仿真结果分析工具Inspect及TecplotSV;集成虚拟化设计平台Sentaurus WorkBench）进行了简要介绍;最后使用Sentaurus TCAD仿真工具实现了超高频SiGe HBT器件的工艺仿真和器件物理特性模拟,选定基区宽度、基区掺杂浓度、基区锗含量、发射区掺杂浓度和集电区掺杂浓度为控制因素,基于适当的试验设计（DoE）方法及理论,建立合理的响应表面模型（RSM）,研究了工艺参数变化对器件物理特性的影响,通过优化设计得到了最佳的工艺参数值;最后对仿真结果进行了简要的分析及讨论,重点讨论了器件的增益特性、频率特性和击穿特性,最终完成了一款性能优良、满足超高频应用领域要求的SiGe HBT异质结双极晶体管的可制造性设计。本工作对超高频SiGe HBT的工艺及器件物理特性进行了深入探讨,最终完成的这款SiGe HBT异质结双极晶体管最大电流增益达到265,特征频率为76GHz,最高振荡频率为176GHz,集电极与基极击穿电压BV_cbo=9.1V,发射极与基极击穿电压BV_ebo=11V,集电极与发射极击穿电压BV_ceo=6V,Early电压为18.35V,可见增益特性、频率特性、击穿特性等都达到了理想的设计值,为国内SiGe HBT异质结器件及集成电路的进一步研究奠定了基础,具有一定的参考价值及应用价值。更多还原

【Abstract】 With the fast developments of wireless communication technologies and mobile communication systems, the requirements to the characteristics of devices and circuits are higher and higher, which ulteriorly force people to explore new materials and devices with new structures, in order to satisfy the requirements of semiconductor industry in the future. In all the new devices, SiGe heterojunction bipolar transistor obviously outgoes Si BJT devices andⅢ-Ⅴcompound heterojunction devices because of its numerous excellences of high performances, high integration level, low costs and compatibility with Si technologies et.al. SiGe HBT devices have been widely used in many aspects, such as mobile communications, satellite communications, sensor and radar technologies, and have becomed one of the best active research hotspots.The paper first generalized the development history and actuality of SiGe HBT inside and outside of the country, put forward the study significance and applied values; discussed the characteristics of SiGe alloy material, simply introduced two widely used epitaxy growth technologies——Ultrahigh Vacuum/Chemical Vapor Deposition(UHV/CVD) and Molecular Beam Epitaxy(MBE); detailedly analyzed the basic working principle and performances of SiGe HBT, including working currents, current gain, characteristic frequency and maximal oscillatory frequency, and presented corresponding count expressions, it emphasized the influences of all factors to characteristic frequency by analyzing the delay time of emitter, the memory time of emitter field, the transport time of base, the transport time of space charge field of collector, the delay time of collector respectively; it ascertained the correlative technologies used in device design, the reference targets of structure size and process parameters, according to the theoretical study and analysis, design rules and requirements of emitter, base and collector, it aimed at improving the current gain, frequency characteristics and punchthrough voltage; simply introduced the new generation TCAD simulation tools used in ultrahigh frequency SiGe HBT design, including process simulation tool-Sentaurus Process, mesh optimization tool- Sentaurus Structure Editor, device simulation tool-Sentaurus Device, resultsanalysis tools-Inspect and Tecplot SV, integrated design platform-SentaurusWorkBench; finally, it carried out the process simulation and device simulation of ultrahigh frequency SiGe HBT using Sentaurus TCAD simulation tools. It selected the base width, the base doping, the base Ge content, the emitter doping and the collector doping as control factors, based on the appropriate DoE methods and theories, set up reasonable RSM, studied how these process parameters affect the device physical charateristics and obtained the optimal process parameters values by optimizing design. Finally, the paper briefly analyzed and discussed the simulation results, it emphasized the gain charateristics, frequency characteristics and punchthrough characteristics of the device, and finally accomplished the DFM of ultrahigh frequency SiGe HBT, which has good performances and satisfies the ultrahigh frequency application field.The paper lucubrated in the process and device characteristics of ultrahigh SiGe HBT. The highest current gain of the SiGe HBT device accomplished here is 265, its characteristic frequency is 76GHz and maximal oscillatory frequency is 176GHz, the collector-base punchthrough voltage is 9.1V, the collector-emitter punchthrough voltage is 6V, the emitter-collector punchthrough voltage is 11V and the Early voltage is 18.35V. It is obvious that the gain characteristics, the frequency characteristics and the punchthrough characteristics all reached perfect design values. It established base to the more studies in SiGe HBT heterojunction devices and integrated circuits in the country, and possesses reference value and applied value. the which.更多还原