【作者】 王磊；

【导师】 曹一江；

【作者基本信息】 哈尔滨理工大学 ， 微电子学与固体电子学， 2008， 硕士

【摘要】 作为第二代半导体材料的典型代表,砷化镓(GaAs)材料较硅(Si)具有更好的半导体特性和光电特性,在多种高速器件和光电器件中有着广泛的应用。但是,传统的GaAs薄膜制备方法具有设备复杂、成本高、能耗大、工艺周期长和污染环境等缺点,限制了GaAs薄膜的广泛应用。而采用电共沉积法制备GaAs薄膜可以克服这些缺点。虽然电沉积方法是一种历久弥新的膜材料制备工艺,但电沉积GaAs薄膜却鲜有研究,电沉积GaAs薄膜的质量也有待提高。研究电共沉积GaAs薄膜的工艺条件,分析影响沉积过程和沉积膜质量的因素,改善电共沉积GaAs薄膜的质量,并测试沉积膜的物理及化学特性,为电共沉积GaAs薄膜的应用打下基础,具有重要的意义。本文以电共沉积合金理论为基础,选取对电沉积影响较明显的因素,如电流密度、电解液浓度与组分、电极材料等,进行正交实验。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)等对实验获得的沉积膜进行表征,分析了各个因素对电共沉积GaAs薄膜的影响,得出本实验在电解液中含有络合剂EDTA和不含EDTA两种情况下的最优工艺条件。最后,测试了在最优工艺条件下制备的沉积膜的结构与组分、导电类型以及和基片间的I-V特性。对电共沉积GaAs薄膜进行了有一定意义的、实验性的研究。更多还原

【Abstract】 As typical second generation semiconductor material, gallium arsenide (GaAs) had been applied in many kinds of high speed or photoelectric devices, because of its better semiconductor property compared with silicon (Si). However, there were many defects in traditional GaAs epitaxy process such as complicated equipment, vast power consume, long process period, pollution of the environment, limited the wide-ranging application of GaAs thin film. It had been achieved that overcome the defects by using electrodeposited GaAs, favor to prepare GaAs thin film solar cell with high ratio between efficiency and cost.As a film forming process, electrodepositing method was liven and had centuries-old history. But it is rare that research of electrodeposited GaAs film. The quality and thickness of the deposited film was to be improved yet. It were important that researching the process of electrodeposition GaAs thin film, analyzing the influence factors of the process, improving the quality of the deposited film, measuring the physical and chemical properties and making the foundation for the application of the GaAs film.Based on the theory of electrodeposition alloy, orthogonal experiment was done when one deposition parameter was variable and others fixed. These parameters were current density, the concentration and component of the electrolyte, electrode material. The patterns of the deposited films were observed by SEM, the ingredient was analyzed by energy spectrometer and the diffraction spectrum was recorded XRD. The optimum technological conditions of the two cases ,with and without EDTA in electrolyte,were obtained by means of experiment and test analysis. Such properties of the GaAs film obtained on the optimum technological conditions as constitution, appearance, conduction type, I-V characteristic were studied also. It was systematicness and practicalness study on the electrodeposition GaAs film.更多还原