【作者】 朱峰；

【导师】 陈维友；

【作者基本信息】 吉林大学 ， 微电子学与固体电子学， 2008， 硕士

【摘要】 本论文主要讨论应用ICP刻蚀方法制作SOI光子射频移相器,在对器件参数及损耗的模拟与计算后,确定了相关的器件参数,然后应用Si刻蚀方法进行器件的制作。本论文研究的是利用延时线理论制作的移相器,通过对比选择SOI为器件基片,利用体硅工艺进行加工,还进行了减少器件损耗的分析,经研究发现,SOI基的光子射频移相器作为光集成器件有着性能方面的优势,制作工艺简单,易于IC集成。但是这种器件的制作又存在着一些缺陷,因为要保证固定的延时,就要保证四条延时线有足够的差值,所以器件的面积很难缩小,增加成本的同时又与电子元件的小型化发展方向相背离。本论文在尝试着对器件设计、损耗减少、实验方法的改进同时,摸索出一条切实可行的制作路线,并且相信随着电子技术的发展,器件的应用前景会更好。更多还原

【Abstract】 High speed and large capacity optical transfer and exchange as the main direction of modern communication network. Being one of the key devices in the communication and radar applications, photonic phase shifter generated RF signals plays a key role in the performance improvement of the optical and phase controlling arrays. Si-based Silicon-On-Insulator （SOI） optical waveguide technology and the Si-based micro-electronics devices has been one of the hot topics in the integrated optics because it provides a high index contrast waveguide platform compatible with existing monolithic microelectronic fabrication processes and the inherent compatibility with optical fibers allowing low coupling loss.The propagating characteristics of photonic phase shifter generated RF signals based on the SOI optical waveguide are simulated by time field domine finite thrust differential method （FDTD） and beam propagation method （BPM）. The transmission characteristic of the SOI optical waveguide is simulated. The design rules for SOI single-mode rib waveguide are analyzed, including single-mode conditions, coupling efficiency with single-mode optical fiber, capability of confining optical fields and so on. The transferring characteristics of SOI curved waveguides and intersected waveguides are studied. The bent waveguides with different curved radius and the intersected waveguides with various intersecting angle are also designed and fabricated.A method mechanism to fabricating three-dimension SOI optical waveguide, namely inductively coupled plasma （ICP） dry etching, using C4F8/SF6/O₂ mixed gases, is investigated. Several complications effecting etching quality are analyzed, including airflow ratio, RF power, the quality of metal mask film and the temperature of the SOI wafer. And the methods to improve the etching quality are given, including imperative cooling of loading desk and multi-step etching.The shunt and join implement of "Y" branch SOI 1×2、and 1×4 MMI couplers are designed and fabricated. The power uniformity of these devices are 0.2、0.3 and 1.5dB, respectively. Improvement on the homogeneity of ICP large-area etching is useful to the optimization of the couplers’ characteristics. And the optical waveguide delay line is also designed and fabricated, the attempt are made to improve the territory. At the same time, we study the source of the optical waveguide loss, and bring forward the specific method to reduce the loss.更多还原