【作者】 郭培涛；

【导师】 薛亦渝；

【作者基本信息】 武汉理工大学 ， 材料学， 2007， 硕士

【摘要】 光学薄膜作为纳米材料的一种,受到广大研究和应用者的关注,已经广泛应用于显示器、太阳能电池、光通讯以及激光器件等诸多领域。Ta₂O₅薄膜的制备工艺、介电性能、光学性能等也是国内外研究者关注的热点。制备工艺、后处理工艺和生长方式对薄膜的结构和各种性能有至关重要的影响,离子束作用于薄膜生长,打破了热蒸发时的生长模式,变得更为复杂。本文采用有无离子源辅助电子束蒸发两种工艺制备了Ta₂O₅薄膜,研究了制备工艺对Ta₂O₅薄膜性能的影响。结果表明无离子源辅助电子束蒸发加工转工艺下制备的薄膜厚度均匀性很好,而离子束的引入一定程度上破坏了这种稳定性;用XRD、XPS技术分析了膜料及Ta₂O₅薄膜的相结构和成分,结果表明膜料预熔后的主要成分还是Ta₂O₅,具有很好的稳定性,制备的薄膜为非晶态,O/Ta比为2.69;用UV755B、U-4100型分光光度计测试了薄膜的透射光谱,计算得薄膜的折射率,并以此分析了本底真空、离子束辅助等工艺参数对薄膜光学性能的影响,实验结果表明高本底真空或引入离子束都可以提高Ta₂O₅薄膜的折射率。用AFM表征了有离子源电子束蒸发制备薄膜的表面形貌、粗糙度、相位信息,分析认为此工艺下Ta₂O₅薄膜为岛状模式生长,不同厚度薄膜表面粗糙度变化不大。本文还系统研究了退火工艺对Ta₂O₅薄膜性能的影响,分别选取有无离子源辅助电子束蒸发制备的薄膜试样,研究了退火温度（300℃、400℃、500℃、600℃）、保温时间（2h、3h、4h）、保护气氛（空气、氩气）对薄膜光学性能的影响。实验及分析表明,经过300℃～600℃退火处理,Ta₂O₅薄膜均为非晶态,同样的退火工艺对有、无离子源辅助电子束蒸发制备的Ta₂O₅薄膜的折射率、透射率及其极值位置影响不同,无离子源电子束蒸发制备的Ta₂O₅薄膜的光学性能相对稳定。更多还原

【Abstract】 Optical thin film is a kind of nano-material which many researchers and users pay much attention to. It has been widely used in indicator, solar battery, optical communication and laser device industries etc. The preparation process , dielectric property and optical property of Ta-2O₅ thin film been deeply researched by investigators .The preparation parameters, post treatment and growth mode exerts strong influence on microstructure and property of the thin film. The growth mode would be destroyed and become more complicated when the ion beam was introduced into the grow process of thermal evaporation deposition.We prepared Ta₂O₅ thin films by electron-beam deposition system with and without ion source assisted and studied influence of preparation parameters exerts on properties of Ta₂O₅ thin film. We analyzed the raw material and Ta₂O₅ thin films with XRD and XPS. The result shows that the premelting material is mainly Ta₂O₅ and Ta₂O₅ is steady under the process of electron-beam deposition. The Ta₂O₅ thin films we prepared are amorphous and the ratio of O to Ta are 2.69. We measured the transmittances spectra through UV 755B and U-4100 Spectrophotometer, and deduced refractive indexes from the extremums of transmittances. The optical performance of thin films were investigated at various process parameters, such as base vacuum and ion source. The result shows that higher base vacuum or ion source both can improve the refractive indexes of Ta₂O₅ thin films . We got informations about surface topography, roughness and phase error of the thin films which prepared with ion source assisted by AFM. The result shows that the Ta₂O₅ thin film has excellent roughness and the roughness enlarged with the thickness accretion of Ta₂O₅ thin film. The film grows in island mode with ion source assisted.We also researched the property of Ta₂O₅ thin films were annealed under different atmosphere. The films prepared by electronic beam deposition with and without ion beam assisted were both chosen for anneal. The process parameters we chosen include anneal in air and in Ar, annealing temperature（300℃,400℃,500℃,600℃） and holding time（2h,3h,4h）. The experiments result shows that Ta₂O₅ thin films be annealed under 600℃are amorphous. Anneal has different influence on films’ refractive indexes, transmittance and the drift of transmittance extremum. TheTa₂O₅ thin film prepared by electronic beam deposition without ion beam assisted has higher steadied than those Ta₂O₅ thin films prepared by electronic beam deposition with ion beam assisted.更多还原