【作者】 闫益；

【导师】 诸葛兰剑； 吴雪梅；

【作者基本信息】 苏州大学 ， 凝聚态物理， 2007， 硕士

【摘要】 ZnO是一种新型的半导体材料,具有具有较大的禁带宽度(～3.37eV)和较大的激子结合能(约60meV),这些特点使得ZnO能够在光电领域广泛应用,从而引起了研究者广泛的兴趣。尤其是近年来,许多有关稀磁半导体方面的报道都称过渡金属掺杂ZnO有可能作为一种优良的材料在自旋电子学领域被应用,这更加使ZnO成为一种重要的有广阔应用前景的材料,从而也使ZnO成为更多研究者瞩目的焦点。本论文通过射频磁控溅射的方法,制备了ZnO薄膜,并对样品进行退火处理,通过XRD,SEM,TEM等测试手段分析了薄膜的结构和表面状况,研究了退火对薄膜结构和光致发光性质的影响。本论文也制备了Co掺杂ZnO薄膜,通过XRD,PL谱,紫外-可见投射光谱和spuid的测试研究了Co掺杂对ZnO薄膜的结构,光学和磁学性质的影响。研究结果表明,氧化锌薄膜的生长方式受沉积条件影响,成膜初期,薄膜的表面形貌受到沉积时基片温度和基片表面微结构的影响,当沉积温度不是很高时,薄膜呈现分形生长,并且分形薄膜在不同的基片上呈现不同的形貌。本论文采用磁控溅射的方法制备晶体结构良好的ZnO薄膜。退火处理对样品的结构和光致发光性质产生影响。Co掺杂对ZnO薄膜的晶体结构和PL性质也造成影响,随着Co的掺入样品的XRD衍射峰位发生偏移,PL谱也随着掺杂量的增加而使发光强度有所改变。本论文也研究了Co掺杂ZnO薄膜的磁学性能,使用超导量子干涉仪在5K温度下测量了薄膜的M-H曲线,测量结果表明Co掺杂ZnO不具有明显的铁磁性。更多还原

【Abstract】 ZnO is a promising semiconductor material with the properties of direct wide-band gap (Eg~3.3ev at 300K), large exciton binding energy (~60meV), as well as ferromagnetic behavior when doped with transmit metals. These properties make ZnO suitable for optical, optoelectronic and laser emission applications.In this paper, ZnO films were prepared in a RF-magnetic system and were annealed at different temperature. XRD, SEM, TEM were used to study the structure and the morphology of the thin film. Co-doped ZnO films were also prepared. XRD, PL and squid technique were used to study the structure, PL, and magnetic properties.The result showed that the morphology of the ZnO film were affected by the deposition conditions. At room temperature, the morphologies of the ZnO film were different when deposited on NaCl substrate and on Si substrate. When deposited at 200℃, the film transformed from fractal growth to compact growth.The effect of the annealing process on the structure and PL properties of the ZnO film was also discussed in this paper. The result showed that as increase the annealing temperature, the crystallization of the film becomes well. The annealing process also affected the PL properties of the ZnO film.The structure, PL and magnetic properties of the Co-doped ZnO films are also discussed in this paper. From the result, we can find out that the introduction of Co changes the structure of the film. The introduction of Co also affects the PL properties of the film. The magnetic properties of ZnO film is performed at 5Kusing a SQUID technique.更多还原