【作者】 戴丽丽；

【导师】 王水凤；

【作者基本信息】 南昌大学 ， 材料物理与化学， 2007， 硕士

【摘要】 多孔硅在全硅光电子集成有着潜在的应用前景，但是要将多孔硅投入实际使用，尚有许多工作要做，其中最重要的问题之一就是如何解决多孔硅发光的不稳定性。本文研究了不同后处理对多孔硅发光稳定性的影响。采用电化学阳极腐蚀法制备了不同条件下的多孔硅，通过阴极还原和酸处理两种处理方法对多孔硅表面进行改性。根据PL谱的测试结果讨论分析不同的条件对多孔硅发光的影响。借助原子力显微镜分析处理对样品表面形貌和成分的影响。实验结果表明酸处理对提高多孔硅的发光效率有显著的效果，并提出了其可能的作用机制。论文着重对比了不同条件下未处理与阴极还原处理的多孔硅样品的发光稳定性。在自然存放下，经过阴极还原处理的多孔硅，发光峰位及发光强度变化都很小，呈稳定状态。在自然存放时间长达一年的样品，对多孔硅的双峰现象进行了PL谱测试。研究了不同的激发波长对长波峰和短波峰的影响规律。在自然存放的缓慢氧化过程中，氧化过程对未处理的样品影响强于阴极还原处理的样品，对长波峰的影响强于短波峰，而随着激发波长的减小，短波峰的强度逐渐增强。自然存放的多孔硅，在氧化到达到一定的程度，短波长(250nm)激发多孔硅样品，发光峰位和强度不再改变。并综合实验结果对多孔硅的发光机制进行了探讨。更多还原

【Abstract】 Porous silicon can be used in the area of silicon-based photo-electronics deviceswith great prosperity, but it is still far away from real implement so far. Among thosepractical problems, the most important one is to solve the instability of luminance ofporous silicon.In this paper, we have discussed the effects on luminance stability throughdifferent treatments to porous silicon. We adopted anodic etching to make poroussilicon samples under different experimental conditions, after that, we treated thosesamples through cathodic reduction and acid treatment respectively in order toimprove the samples’ surface. With PL measurement we analyzed those conditions’effects on luminance of porous silicon. By means of atom force microscope (AFM)we discussed the samples’ surface look and components.Experimental results indicate that acid treatment is a useful treatment toimprove luminance efficiency, and cathodic reduction, from another aspect, canenhance sample’s luminance stability, compared with the samples without cathodicreduction. We also use PL measurement to samples that have been stored for oneyear, and pay attention to the two peaks in the PL graph with different excitationwavelength. We find that the effects of gradual oxidization exposed in the air isgreater on untreated samples than those samples treated by cathodic reduction, andthe effects on longer wave peak is greater than shorter one. Moreover, the intensityof short peak will increase with the decline of excitation wavelength. To thosesamples exposed in the air, when aging reach to a certain level, the peak andintensity will not change under the excitation wavelength of 250 nm. Consideringour experimental results we discussed the phgtoluminescence mechanism of poroussilicon.更多还原