【作者】 张旭辉；

【导师】 张福甲；

【作者基本信息】 兰州大学 ， 微电子与固体电子学， 2007， 硕士

【摘要】 有机场效应晶体管(Organic Field Effect Transistors，OFETs)是以有机半导体材料为有源层的晶体管器件，和传统的无机半导体器件相比，具有成本低、可实现大面积加工、可与柔性基底集成等优点，因此在世界范围内引起了广泛关注。由于最近的十数年间，有机半导体材料和器件工艺等方面研究的显著进步，OFETs的迁移率、开关电流比等性能参数已达到或超过非晶硅(a-Si：H)晶体管器件的水平，是各种各样的要求低成本、大面积的商业电子应用领域极具吸引力的技术，如智能卡、传感器、射频标识、平板显示等领域。目前，这种要求低成本、大面积的电子应用市场基本上被基于a-Si：H的薄膜晶体管所占据，然而，要想得到较高性能的a-Si：H TFTs器件，需要＞200℃的成膜工艺，因此，限制了a-Si：H TFTs器件与聚合物柔性衬底的集成，而OFETs可以兼容低温工艺，这也是其另一条具有吸引力的优点。文中首先回顾了OFETs的发展历史，概述了各种OFET中常用的材料，包括有机场效应半导体材料、电极材料和绝缘层材料等，除此之外，对现阶段OFET存在的问题、研究热点及未来的发展方向作了小结。从OFET结构、有机半导体中的载流子传输机理、OFET的Ⅰ-Ⅴ公式推导等方面阐释了OFET的工作机理，并用数值方法对OFET进行了模拟，分析了一些参数对OFET性能的影响，得到了一些有意思的结果。本文重点研究了并五苯这种材料，介绍了并五苯的合成、表征，并研究了诸如沉积速率、衬底温度等参数对并五苯薄膜性质的影响，制备了底电极结构的并五苯OFETs器件和p-Si／并五苯／Al二极管结构器件，并以此衡量并五苯的性质(迁移率)；简要回顾了并五苯类材料新型材料和工艺的研究现状，并用溶液方法制备了并五苯薄膜，用AFM、SEM、XRD等手段对薄膜进行了表征，讨论了溶液成膜(旋涂)存在的问题。最后，对本文工作进行了小结并结合实际情况讨论未来可能开展的工作。更多还原

【Abstract】 Organic Thin Film transistors (OFETs) are transistors device using organic semiconductor materials as active layers, and have got various interesting from scientist and industry. Compared with common inorganic transistors, because of the relatively low mobility of the organic semiconductor layers, OFETs cannot rival the performance of FETs based on single-crystalline inorganic semiconductors, such as Si and Ge, which have charge carrier mobilities (μ) about three orders of magnitude higher, though OFETs are not suitable for use in applications requiring very high switching speeds, but they have two distinct advantages: low cost over a large area and low temperature fabrication on a flexible substrate, these suggest that they can be competitive for existing or novel thin-film-transistor applications requiring large-area coverage, structural flexibility, low-temperature processing, and, especially, low cost, such as flexible flat panel displays, electronic papers, radio frequency identification tags, sensors and smart cards. Thin film transistors (TFTs) based on hydrogenated amorphous silicon (a-Si:H) currently dominate these low-cost, large-area electronics market, however, high performance a-Si:H TFTs require process temperatures>200°C and therefore have limited compatibility with polymeric substrates, on the other hand, OFETs offer an attractive low-temperature alternative.This thesis review recent progress in materials, fabrication processes, device designs, and applications related to OFETs, and introduce the theory of OFETs including carriers transport mechanics, carriers’ injection theory and so on. The principle simulation gives some interest results. This thesis report the synthesis and characterization of pentacene, report the investigation of the pentacene thin films affected by the deposition rate and substrates temperature, and the pentacene OFETs device fabrication, and the p-Si/pentacene/Al diode structure device fabrication. This thesis also review the novel pentacene related materials, and introduce our principle solution fabrication strategy of pentacene films. At the end, we give a shortly prospect of future work.更多还原