【作者】 田合雷；

【导师】 何晓雄；

【作者基本信息】 合肥工业大学 ， 微电子与固体电子学， 2007， 硕士

【摘要】 电致变色薄膜可用于灵巧窗，大面积、高对比度、高分辨率及无视角差的显示屏，汽车后视镜的自动光强调节等方面，具有很广泛的应用前景。在众多电致变色材料中，三氧化钨（WO₃）具有着色效率高、可逆性好、响应时间短、寿命长、成本低等特点，被认为是最有发展前途的电致变色材料之一。本课题采用电子束蒸发法在导电玻璃（ITO）上沉积WO₃薄膜，通过原子力显微镜（AFM）、X射线衍射仪（XRD）和紫外-可见光分光光度计对薄膜进行表征和分析，讨论了不同镀膜工艺参数对薄膜形貌、结构和电致变色性能的影响，确定了较为合适的变色薄膜厚度和退火温度。通过对样品的AFM分析发现，室温条件下所镀薄膜随着退火温度的升高，晶粒逐渐增大。350℃退火的WO₃薄膜随着膜厚的增加或基片温度的升高，薄膜表面的团簇现象增多；束流大小对薄膜表面形貌无明显影响。通过对基片和靶材的XRD分析，证明了靶材呈多晶态，具有三斜相结构。对室温下所镀薄膜退火后进行分析，结果表明WO₃薄膜由非晶态向晶态转化的温度范围是320℃——350℃。对350℃退火后样品的XRD分析，发现随着薄膜厚度的增加或基片温度的升高，薄膜生长的取向性增多；束流的变化对晶体结构无明显影响。对室温所镀薄膜在经过不同温度退火，进行可见光范围内的透射率分析，分别对比了它们的透射率之差。对不同条件的薄膜进行了退火后的透射率分析，得到了较为合适的变色薄膜的厚度和退火条件。同时研究了变色薄膜的开关响应时间、循环利用次数、记忆存储能力三个重要的性能指标。更多还原

【Abstract】 Electrochromic thin films can be used for the Smart Windows, a large, high contrast, high-resolution and no-visual difference display screens, switchable car rear-view mirrors, ect.The application prospects of electrochromic thin films are very wide. It is considered to be the most promising electrochromic material because of high efficiency and good reversibility, short response time, longevity, and low cost.The topic studies e-beam deposits tungsten oxide （WO₃） target on the ITO glass. UV-visible spectrophotometer and X-ray diffraction （XRD） and atomic force microscopy （AFM） analyzes the characterization of WO3 thin films. It discusses the influence to the electrochromic properties and structure under the different parameter conditions. We find a more appropriate electrochromic film thickness and annealing temperature.The WO₃ samples were investigated by AFM. The results show that the grain size of the thin films deposited at room temperature becomes larger with the annealing temperature increased. The clusters of the thin films annealed at 350℃increased with the condition of increasing thickness or rising substrate temperature.The beam size has no significant effect on the surface morphology.Through XRD analysis of the substrate and the target it proves that the target was polycrystalline with triclinic structure. The WO₃ samples were investigated by XRD. The results show that the transformation temperature from amorphous to crystalline WO₃ thin films ranges from 320℃to 350℃. The crystalline orientation of the thin films annealed at 350℃increased with the condition of increasing thickness or rising substrate temperature.The beam size has no significant effect on the structure of crystalline.We analyze the transmittance of the thin films within the visible light after depositing thin films under room temperature and annealing at different temperatures. We compare the difference of the transmittance. We get a more appropriate thickness of the thin film and annealing conditions after the transmittance analysis of the different parameter condition thin films. Meanwhile we also study three important performance indicators switches response time, the number of recycling, memory storage capacity of the thin films.更多还原