【作者】 黄燕华；

【导师】 陈松岩；

【作者基本信息】 厦门大学 ， 凝聚态物理， 2006， 硕士

【摘要】 硅是目前世界上矿藏最丰富且微电子工艺最成熟的半导体材料,也是光电集成最理想的半导体材料。但是由于硅具有间接带隙,跃迁几率很低,引起硅的发光效率极低,并且发光不稳定,因此硅基发光一直是硅光电集成中最重要的难题。另外,为实现全硅光电集成,硅探测器在光互连,大容量通讯等领域中具有深远的应用前景。硅MSM结构光电探测器工艺简单,与CMOS等工艺兼容,是硅光电集成研究的一个热点。但是,由于硅本身对光的吸收系数比较低引起对光的吸收长度较长,从而引起硅MSM结构光电探测器响应速率和响应度不高。本文针对以上两个问题进行了研究,并为硅基光电单片集成做准备工作:一.多孔硅发光的制备和钝化研究。硅的发光效率低及不稳定是限制硅基发光的关键瓶颈,本文提出一种新颖的臭氧(O3)环境制备和钝化方法来改善多孔硅的发光效率,取得以下重要结果:1.该方法制备的多孔硅比传统方法制备的多孔硅发光强度增大了近一个数量级;2.对O3环境下制备和钝化的多孔硅的发光稳定性进行了两方面的研究。一方面对样品进行高功率激光持续照射30分钟的PL演变测试,发现不管是新鲜样品还是自然环境中存放129天的样品,持续的激光照射只引起很小量的PL强度衰减然后就基本维持稳定状态;另一方面对样品进行存放158天跟踪测试,发现在开始存放的61天内,发光强度不断增强,61天之后,发光强度则基本保持稳定状态。两方面的稳定性研究与前人的实验报道具有更好的发光稳定性效果。3.通过XPS,PL,FTIR等测试表明臭氧环境下制备的样品表面的钝化膜比较致密,氧化程度比较高,并且样品表面的化学成分基本稳定,这是样品发光强度和稳定性改善的原因。二.硅MSM光电探测器的制备。为提高硅MSM光电探测器的响应度和响应速度,本文以实验室现有条件为基础,进行了下列工作:1.设计了平版和凹槽两种电极结构以及5-5um和5-10um两种尺寸的硅MSM结构探测器;更多还原

【Abstract】 Silicon based optoelectronic devices have been investigated greatly, because of the great advantages afforded by this approach: an available well-developed and widespread technology, monolithic integration with control/driving electronics and low cost. But silicon is an indirect bandgap semiconductor, which makes it extremely unlikely light emission by free carrier recombination. Silicon-based light emission is the most important problem in silicon-based optoelectronic integrated circuits (OEICs). On the other side, in order to fulfill silicon-based OEICs, silicon metal-semiconductor-metal photodetectors (Si-MSM-PDs) are very attractive for many optoelectronic applications, such as optical communication, high-speed chip-to-chip connection, and high-speed sampling, because of the planarity of the double Schottky contacts, without mesa structures or special epitaxial layers, so that they can be easily integrated onto a single chip with a bipolar or complementary metal-oxide-semiconductor(CMOS) transistor preamplifier. However, the low carrier mobility and low absorbance cause a poor photogenerated carrier collection efficiency and a small responsivity.In this paper, we have investigated silicon based luminescence materials and photodetector on two aspects as follows:Ⅰ. The fabrication and passivation of porous silicon(PS). We applied a novel method to fabricate and passivate PS by the aids of ozone(O3) to improve the PL efficiency. The performance test have showed very important advancement: 1. The PL of PS fabricated and passivated by the aids of O3 has been enhanced by nearly one order magnitude than that of PS fabricated by conventional method.2. The stabilization of PL has been enhanced greatly both under continuous laser for 30 minutes and placed in air for 158 days. The stabilization of our sample is much better than that has been reported nationally and abroad.3. We have explained the reason of performance improvement of our sample by analysing the chemical composition of PS with XPS and FTIR test.Ⅱ. The design and fabrication of silicon-based MSM photodetectors with improved performance.1. In order to improve the responsivity time and responsivity, we have designed a novel Si-MSM-PD with U-shape trench interdigitated electrodes. Besides, Si-MSM-PDs with different interdigitated space has also been designed.更多还原