【作者】 徐敏；

【导师】 沈文忠；

【作者基本信息】 上海交通大学 ， 凝聚态物理， 2007， 硕士

【摘要】 本文首先在绪论中讨论了红外物理学科研究的重要性以及远红外探测器研究的进展、我们面临的挑战和需要解决的问题,然后对半导体器件研究中用到的傅立叶变化光谱方法和远红外光谱的物理图象进行了简要的原理概括,接下来我们介绍了光学单层薄膜的菲涅耳公式法,多层薄膜的菲涅耳系数矩阵法等实验理论计算中的光学方法以及半导体光学参数、K-K关系、半导体薄膜的反射投射模型。我们以成熟的GaAs材料为例,研究了半导体远红外反射镜中的反射率和相位。通过测量不同掺杂浓度的15块n-GaAs和p-GaAs薄膜样品的远红外反射谱,再通过理论拟合,我们得到了自由载流子的弛豫时间随掺杂浓度变化的经验公式。我们把通过拟和样品远红外反射谱得到的自由载流子的弛豫时间转化成迁移率,和霍尔实验测得的迁移率结果进行了比较,并对两种迁移率之比的规律作出了定性的分析。我们把经验公式应用到数值计算中,详细讨论了反射镜的结构和材料更多还原

【Abstract】 In this paper, we first introduce the importance of the study on the infrared physics, the actuality of the far-infrared (FIR) detector, the challenges and the problems that need to be solved. Then we present the principles of Fourier Transform Spectroscopy and the physics image of FIR spectrum that are used in our research. We go on introducing some principles such as the Optical Transfer Matrix Method, semiconductor optical parameters, Kramers-Kronig relation, and the reflectivity and the transmission models of the semiconductor films.We have carried out an in-depth investigation on the reflectivity and phase shift of a novel semiconductor mirror, which can be applied in the FIR spectral range. By fitting FIR reflection spectra of the mature GaAs material with different doping concentrations, two empirical formulas are obtained for the doping concentration-dependent carrier relaxation time of n-GaAs and p-GaAs. We have a qualitative analysis on the ratio between the mobility from Hall experiment and the results from fitting the FIR reflectivity spectrum. The effects of structure and material parameters on the reflectivity and the phase shift of the mirror are analytically studied in detail based on the deduced formula. All the related parameters of the更多还原