【作者】 黄小君；

【导师】 杜磊；

【作者基本信息】 西安电子科技大学 ， 材料学， 2007， 硕士

【摘要】 现代集成电路互连线的有效截面积已达到1平方微米量级以至于更小。因此,当电流达到毫安量级将导致电流密度达到兆安每平方厘米数量级。在这种情况下电迁移现象极为明显。金属互连电迁移已经成为超大规模集成电路主要失效模式之一。电阻是金属互连电迁移传统表征参量。噪声表征技术比电阻更为灵敏和全面。以往都是将噪声信号当作高斯信号,而且电迁移噪声表征模型也是基于高斯过程的。实验发现电迁移过程的某些阶段噪声信号具有非高斯性。这种非高斯性产生自迁移动力学机制,因此通过非高斯性分析,可以从噪声中提取电迁移相关动力学信息。本文在电迁移失效机理和噪声非高斯性的理论基础上,将非高斯信号检测方法引入电迁移噪声时间序列的分析,通过实验证实在电迁移前期噪声信号以高斯噪声为主,在空洞成核时期发生非高斯跳变,转而以非高斯噪声为主。引入高阶统计量T2对电迁移噪声信号的非高斯性进行定量描述。将实验过程中非高斯性参量变化与电阻及传统的噪声表征参量进行了对比,表明T2可以更为敏感地反映了电迁移动力学机制。为了解释实验结果并进一步建立基于噪声非高斯性参量的电迁移噪声表征模型,本文通过引入自由体积的概念,采用散射理论,从理论解释了电迁移噪声信号非高斯性产生的原因与机制。所建立的数学模型证明理论预期与实验结果一致。这些工作为噪声非高斯性参量可作为一种新的电迁移表征参量以及建立相应的表征模型奠定了基础。更多还原

【Abstract】 The interconnection lines of modern integrated circuits have effective cross sections in the range of 1μm 2 or less . Therefore , currents of a few milliamps result in current densities in the range of MA/cm-2. Under these conditions , the phenomen of electromigration arises.Electromigration has been one of the important invalidation in VLSI. resistance is the traditional token parameter of electromigration ; noise is the new tool , more sensitive and complete . The past noise were regard as Gaussian noise in the electromigration analysis , and the model based on Gaussian process ; the non-gaussian noise were found in the electromigration experiment phase . The non-gaussian noise origined from the danamical mechanism , so electromigration danamical information can obtained from non-gaussian analysis of the danamical parameter .Based on a brief description to the damage mechanism for electromigration and non-gaussian of noise theories , analysed the electromigration noise used by non-gaussian measured tools , found a new experiment phenomenon—the non-gaussian noise exist in the whole electromigration process ; the gaussian noise dominant in the early stage , the non-gaussian noise dominant in the voids nucleation and growth stage . A new parameter–T2 was brought to character the non-gaussian noise in electromigration process, then contrast it with the resistance and conventional noise parameter . In the forth section , we introduced the free volume , described the electron scattering mechanisms , simpled the complex electromigration process . Based on the free volume ,built a new electromigration model—non-gaussian noise model, we explained the noise non-gaussian in the electromigration , this agreed with the experiment phnenomen . As a result , the noise non-gaussian can be a new token parameter of electromigration .更多还原