【作者】 池毓宋；

【导师】 黄风义；

【作者基本信息】 东南大学 ， 电路与系统， 2006， 硕士

【摘要】 无线通信的快速增长为射频集成电路带来了巨大的市场需求。随着CMOS工艺特征尺寸的不断减小, MOS场效应管的特征频率已经超过了100GHz,这使得CMOS工艺成为射频集成电路设计的一个重要选择。为了提高市场竞争力,采用具有高集成度、低成本、低功耗和易于系统集成等优点的CMOS工艺进行射频集成电路设计已成为近几年射频集成电路设计的热点。然而,采用CMOS工艺进行射频集成电路设计面临着众多挑战。其中很重要的一点就是缺乏准确的模型。为了缩短射频集成电路的设计周期,减少产品进入市场的时间,开展CMOS工艺射频MOS场效应管模型研究,为CMOS射频集成电路设计者提供准确的射频MOS场效应管模型具有重要意义。目前国际上0.13μm CMOS工艺射频MOS场效应管模型,特别是针对射频应用的模型,还不完善。基于这种背景,本文将开展针对射频应用的0.13μm CMOS工艺射频MOS场效应管模型的研究。论文首先对模型研究的背景进行了介绍,包括MOS场效应管模型的历史、发展趋势和要求等,并归纳了模型的研究流程。其次,对MOS器件进行了简要的介绍,分析了器件尺寸减小对器件性能的影响。接着,采用0.13μm CMOS工艺进行了射频MOS场效应管的版图优化设计,并对器件进行了准确的特性表征。最后,采用等效电路模型对0.13μm CMOS工艺射频MOS场效应管的小信号特性进行了准确的模拟,提出了改进的参数提取方法并通过测试数据进行了验证。更多还原

【Abstract】 The rapid progress in the wireless communication has induced a great market demand for radio frequency integration circuits (RF ICs). With the continuous scaling of CMOS technology, the cutoff frequency of MOSFET has exceeded 100GHz, which makes the CMOS technology a good candidate for the realization of RFICs. With the advantage of low cost, high level of integration, low power and ease of integration in system-on-chip (SOC), there are many CMOS RF IC emerged in the past several years.However, it is still very challenging to design RF IC in CMOS technology. One of the major barriers is the lack of good model for RF application. To reduce the design period and the time-to-market of CMOS RF IC, it is necessary to provide accurate model for RF IC designers.Also, RF MOSFET modeling in 0.13μm CMOS technology is not mature, especially the models for RF application. This thesis will carry out the investigation on RF application MOSFET modeling in 0.13μm CMOS technology.First, the background of our research is introduced, including the history of MOSFET model, the trends and requirements of the MOSFET models. Also, the flow for the model development is summaried. Second, a brief introduction for MOS devices is presented, and the scaling effect on device performance is analyzed. Next, the design of optimized layout for RF MOSFETs in 0.13μm CMOS technology and the characterization of these transistors is accomplished. Finally, accurate small signal modeling for these RF MOSFET is implemented with an equivalent circuit model and an improved approach for parameter extraction of the model is proposed and verified with the measured data.更多还原